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參數(shù)資料
| 型號： | IRF730ALPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET (SMPS MOSFET) |
| 中文描述： | HEXFET功率MOSFET（MOSFET的開關電源） |
| 文件頁數(shù)： | 10/10頁 |
| 文件大?。?/td> | 305K |
| 代理商： | IRF730ALPBF |
10
www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
5.5A, di/dt
≤
90A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
/
When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Starting T
J
= 25°C, L = 19mH
R
G
= 25
, I
AS
= 5.5A. (See Figure 12)
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
Uses IRF730A data and test conditions
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
D
2
Pak Tape & Reel Infomation
Dimensions are shown in millimeters (inches)
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
03/04
相關PDF資料 |
PDF描述 |
|---|---|
| IRF730ASLPBF | HEXFET Power MOSFET (SMPS MOSFET) |
| IRF730ASPBF | HEXFET Power MOSFET (SMPS MOSFET) |
| IRF730ASL | SMPS MOSFET |
| IRF730SPBF | HEXFET POWER MOSFET |
| IRF7316 | HEXFET POWER MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRF730APBF | 功能描述:MOSFET N-Chan 400V 5.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF730AS | 功能描述:MOSFET N-Chan 400V 5.5 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF730AS/LPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET (SMPS MOSFET) |
| IRF730ASL | 制造商:IRF 制造商全稱:International Rectifier 功能描述:SMPS MOSFET |
| IRF730ASLPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFET Power MOSFET (SMPS MOSFET) |
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