• 參數(shù)資料
    型號(hào): IRF7324
    英文描述: -20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package
    中文描述: - 20V的雙P溝道HEXFET功率MOSFET的SO - 8封裝
    文件頁數(shù): 1/10頁
    文件大?。?/td> 184K
    代理商: IRF7324
    5/8/00
    www.irf.com
    1
    IRF730AS/L
    HEXFET
    Power MOSFET
    SMPS MOSFET
    l
    Switch Mode Power Supply (SMPS)
    l
    Uninterruptable Power Supply
    l
    High speed power switching
    Benefits
    l
    Low Gate Charge Qg results in Simple
    Drive Requirement
    l
    Improved Gate, Avalanche and dynamic
    dv/dt Ruggedness
    l
    Fully Characterized Capacitance and
    Avalanche Voltage and Current
    l
    Effective Coss Specified (See AN1001)
    Applications
    V
    DSS
    400V
    Rds(on) max
    1.0
    I
    D
    5.5A
    Typical SMPS Topologies:
    l
    Single Transistor Flyback Xfmr. Reset
    l
    Single Transistor Forward Xfmr. Reset
    (Both US Line input only).
    Parameter
    Max.
    5.5
    3.5
    22
    74
    0.6
    ± 30
    4.6
    Units
    I
    D
    @ T
    C
    = 25°C
    I
    D
    @ T
    C
    = 100°C
    I
    DM
    P
    D
    @T
    C
    = 25°C
    Continuous Drain Current, V
    GS
    @ 10V
    Continuous Drain Current, V
    GS
    @ 10V
    Pulsed Drain Current
    Power Dissipation
    Linear Derating Factor
    Gate-to-Source Voltage
    Peak Diode Recovery dv/dt
    Operating Junction and
    Storage Temperature Range
    Soldering Temperature, for 10 seconds
    A
    W
    W/°C
    V
    V/ns
    V
    GS
    dv/dt
    T
    J
    T
    STG
    -55 to + 150
    300 (1.6mm from case )
    °C
    Absolute Maximum Ratings
    PD-93772A
    Notes
    through
    are on page 10
    D2
    TO-262
    Powered by ICminer.com Electronic-Library Service CopyRight 2003
    相關(guān)PDF資料
    PDF描述
    IRF732FI TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3A I(D) | TO-220AB
    IRF733FI TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3A I(D) | TO-220AB
    IRF734 450V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
    IRF7341Q 55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
    IRF7341QTR TRANSISTOR | MOSFET | MATCHED PAIR | N-CHANNEL | 55V V(BR)DSS | 5.1A I(D) | SO
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    IRF7324D1 功能描述:MOSFET P-CH 20V 2.2A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:FETKY™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
    IRF7324D1PBF 功能描述:MOSFET 20V FETKY 12 VGS 270 RDS 2.7VmOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
    IRF7324D1TR 功能描述:MOSFET P-CH 20V 2.2A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:FETKY™ 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
    IRF7324D1TRPBF 功能描述:MOSFET MOSFT PCh w/Schttky -2.2A 270mOhm 5.2nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
    IRF7324PBF 功能描述:MOSFET DUAL -20V P-CH 12 VGS MAX RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube