參數(shù)資料
型號(hào)： IRF7329PBF
廠商： International Rectifier
英文描述： HEXFET Power MOSFET
中文描述： HEXFET功率MOSFET
文件頁(yè)數(shù)： 1/9頁(yè)
文件大小： 183K
代理商： IRF7329PBF
Parameter
Max.
-12
-9.2
-7.4
-37
2.0
1.3
16
± 8.0
Units
V
V
DS
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
mW/°C
V
°C
V
GS
T
J,
T
STG
-55 to + 150
10/7/04
www.irf.com
1
IRF7329PbF
HEXFET Power MOSFET
Symbol
R
θ
JL
R
θ
JA
Parameter
Typ.
–––
–––
Max.
20
62.5
Units
Junction-to-Drain Lead
Junction-to-Ambient
°C/W
Thermal Resistance
V
DSS
R
DS(on)
max (m
17@V
GS
= -4.5V
21@V
GS
= -2.5V
30@V
GS
= -1.8V
I
D
±
9.2A
±
7.4A
±
4.6A
-12V
Description
New P-Channel HEXFET
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Low Profile (<1.8mm)
Available in Tape & Reel
Lead-Free
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements, multiple
devices can be used in an application with dramatically
reduced board space. The package is designed for
vapor phase, infrared, or wave soldering technique
SO-8
D1
D1
D2
D2
G1
S2
G2
S1
Top View
8
1
2
3
4
5
6
7
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參數(shù)描述
IRF7329TR 功能描述:MOSFET 2P-CH 12V 9.2A 8-SOIC RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 陣列 系列:HEXFET® 產(chǎn)品目錄繪圖:8-SOIC Mosfet Package 標(biāo)準(zhǔn)包裝:1 系列:- FET 型:2 個(gè) N 溝道（雙） FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):60V 電流 - 連續(xù)漏極(Id) @ 25° C:3A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:75 毫歐 @ 4.6A，10V Id 時(shí)的 Vgs(th)（最大）:3V @ 250µA 閘電荷(Qg) @ Vgs:20nC @ 10V 輸入電容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安裝類型:表面貼裝 封裝/外殼:PowerPAK? SO-8 供應(yīng)商設(shè)備封裝:PowerPAK? SO-8 包裝:Digi-Reel® 產(chǎn)品目錄頁(yè)面:1664 (CN2011-ZH PDF) 其它名稱:SI7948DP-T1-GE3DKR
IRF7329TRHR 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 12V 9.2A 8-Pin SOIC T/R
IRF7329TRPBF 功能描述:MOSFET MOSFT DUAL PCh -12V 9.2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRF732FI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3A I(D) | TO-220AB
IRF732R 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 4.5A I(D) | TO-220AB
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