參數(shù)資料
型號： IRF7380PBF
廠商： International Rectifier
英文描述： HEXFET㈢Power MOSFET
中文描述： ㈢的HEXFET功率MOSFET
文件頁數(shù)： 2/8頁
文件大?。?/td> 146K
代理商： IRF7380PBF
IRF7380PbF
2
www.irf.com
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
I
DSS
Drain-to-Source Leakage Current
Min.
80
–––
–––
2.0
–––
–––
–––
–––
Typ. Max. Units
–––
–––
0.09
–––
61
73
–––
4.0
–––
20
–––
250
–––
200
–––
-200
V
V/°C
m
V
μA
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
gfs
Forward Transconductance
Q
g
Total Gate Charge
Q
gs
Gate-to-Source Charge
Q
gd
Gate-to-Drain ("Miller") Charge
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
C
oss
Output Capacitance
C
oss
Output Capacitance
C
oss
eff.
Effective Output Capacitance
Avalanche Characteristics
Parameter
E
AS
Single Pulse Avalanche Energy
I
AR
Avalanche Current
Diode Characteristics
Parameter
I
S
Continuous Source Current
Min.
4.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
–––
–––
15
23
2.9
–––
4.5
–––
9.0
–––
10
–––
41
–––
17
–––
660
–––
110
–––
15
–––
710
–––
72
–––
140
–––
S
nC
ns
pF
Units
mJ
A
Min.
–––
Typ. Max. Units
–––
3.6
A
(Body Diode)
Pulsed Source Current
I
SM
–––
–––
29
A
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
–––
50
110
1.3
–––
–––
V
ns
nC
Typ.
–––
–––
Conditions
V
DS
= 25V, I
D
= 2.2A
I
D
= 2.2A
V
DS
= 40V
V
GS
= 10V
V
DD
= 40V
I
D
= 2.2A
R
G
= 24
Conditions
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 64V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 64V
75
2.2
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 2.2A, V
GS
= 0V
T
J
= 25°C, I
F
= 2.2A, V
DD
= 40V
di/dt = 100A/μs
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 2.2A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 80V, V
GS
= 0V
V
DS
= 64V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
Max.
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