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參數資料
| 型號： | IRF7452QPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 214K |
| 代理商： | IRF7452QPBF |
www.irf.com
1
07/23/07
IRF7452QPbF
SMPS MOSFET
HEXFET Power MOSFET
V
DSS
100V
R
DS(on)
max
0.060
I
D
4.5A
Typical SMPS Topologies
Telecom 48V input DC-DC with Half Bridge Primary or Datacom 28V input
with Passive Reset Forward Converter Primary
Parameter
Max.
4.5
3.6
36
2.5
0.02
± 30
3.5
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
°C
Absolute Maximum Ratings
Notes
through
are on page 8
SO-8
Top View
8
1
2
3
4
5
6
7
D
D
D
D
G
S
A
S
S
A
Advanced Process Technology
Ultra Low On-Resistance
N Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Automotive [Q101] Qualified
Lead-Free
Specifically designed for Automotive applications, these
HEXFET
Power MOSFET's in SO-8 package utilize the
lastest processing techniques to achieve extremely low on-
resistance per silicon area. Additional features of these
Automotive qualified HEXFET Power MOSFET's are a
150°C junction operating temperature, fast switching speed
and improved repetitive avalanche rating. These benefits
combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide
variety of other applications.
The efficient SO-8 package provides enhanced thermal
characteristics making it ideal in a variety of power applications.
This surface mount SO-8 can dramatically reduce board
space and is also available
in Tape & Reel.
相關PDF資料 |
PDF描述 |
|---|---|
| IRF7452 | Power MOSFET(Vdss=100V, Rds(on)max=0.060ohm, Id=4.5A) |
| IRF7453PBF | HEXFET㈢Power MOSFET |
| IRF7453 | Power MOSFET(Vdss=250V, Id=2.2A) |
| IRF7455PBF | HEXFET Power MOSFET |
| IRF7455 | Power MOSFET(Vdss=30V, Rds(on)max=0.0071ohm,Id=15A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF7452QPBF_10 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFETPower MOSFET |
| IRF7452QTRPBF | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7452TR | 功能描述:MOSFET N-CH 100V 4.5A 8-SOIC RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF7452TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 4.5A 8-Pin SOIC T/R |
| IRF7452TRPBF | 功能描述:MOSFET MOSFT 100V 4.5A 60mOhm 33nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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