參數(shù)資料
型號: IRF7456
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=20V, Rds(on)max=0.0065ohm, Id=16A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 20V的,的Rds(on)最大值\u003d 0.0065ohm,身份證\u003d 16A條)
文件頁數(shù): 4/8頁
文件大小: 165K
代理商: IRF7456
IRF7456
4
www.irf.com
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
1
10
100
0
1000
2000
3000
4000
5000
6000
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0
20
40
60
80
0
2
4
6
8
10
12
Q , Total Gate Charge (nC)
V
FOR TEST CIRCUIT
SEE FIGURE
I =
13
16A
V
= 16V
DS
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.2
0.6
1.0
1.4
1.8
2.2
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
T = 150 C
°
1
10
100
1000
0.1
1
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150 C
= 25°
°
J
A
V , Drain-to-Source Voltage (V)
D
I
10us
100us
1ms
10ms
Fig 8.
Maximum Safe Operating Area
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRF7456HR 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 20V 16A 8-Pin SOIC
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IRF7456TR 制造商:International Rectifier 功能描述:
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IRF7456TRPBF 功能描述:MOSFET MOSFT 20V 16A 6.5mOhm 41nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube