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參數資料
| 型號： | IRF7702 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=-12V) |
| 中文描述： | 功率MOSFET（12V的減振鋼板基本\u003d-） |
| 文件頁數： | 1/8頁 |
| 文件大?。?/td> | 138K |
| 代理商： | IRF7702 |
Parameter
Max.
-12
±8.0
±7.0
±70
1.5
0.96
0.01
± 8.0
Units
V
V
DS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 70°C
Drain- Source Voltage
Continuous Drain Current, V
GS
@ -4.5V
Continuous Drain Current, V
GS
@ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Junction and Storage Temperature Range
A
W/°C
V
°C
V
GS
T
J,
T
STG
-55 to + 150
6/19/00
IRF7702
HEXFET
Power MOSFET
R
DS(on)
max
0.014@V
GS
= -4.5V
0.019@V
GS
= -2.5V
0.027@V
GS
= -1.8V
Parameter
Max.
83
Units
°C/W
R
θ
JA
www.irf.com
Maximum Junction-to-Ambient
Thermal Resistance
Description
HEXFET
Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for,
provides thedesigner
with an extremely efficient and reliable device for
battery and load management.
Absolute Maximum Ratings
W
1
l
Ultra Low On-Resistance
l
-1.8V Rated
l
P-Channel MOSFET
l
Very Small SOIC Package
l
Low Profile ( < 1.1mm)
l
Available in Tape & Reel
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
PD - 93849C
PROVISIONAL
TSSOP-8
V
DSS
I
D
-8.0A
-7.0A
-5.8A
-12V
4 = G
3 = S
2 = S
1 = D
1
2
3
4
G
D
S
5
6
7
8
8 = D
7 = S
6 = S
5 = D
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| IRF7706 | Power MOSFET(Vdss=-30V) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF7702GPBF | 制造商:IRF 制造商全稱:International Rectifier 功能描述:HEXFETPower MOSFET Ultra Low On-Resistance 1.8V Rated |
| IRF7702GTRPBF | 功能描述:MOSFET MOSFT PCh -12V -8A 14mOhm 54nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF7702PBF | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 12V 8A 8-Pin TSSOP |
| IRF7702TR | 功能描述:MOSFET P-CH 12V 8A 8-TSSOP RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:HEXFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IRF7702TRHR | 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 12V 8A 8-Pin TSSOP T/R 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 12V 8A 8TSSOP - Tape and Reel |
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