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  • 參數(shù)資料
    型號: IRF7811A
    廠商: International Rectifier
    元件分類: DC/DC變換器
    英文描述: Chipset for DC-DC Converters
    中文描述: 芯片組的DC - DC轉(zhuǎn)換器
    文件頁數(shù): 2/4頁
    文件大小: 128K
    代理商: IRF7811A
    www.irf.com
    2
    IRF7809A/IRF7811A
    Parameter
    Min
    Typ
    Max
    Min
    Typ
    Max Units
    Conditions
    Diode Forward
    Voltage*
    V
    SD
    1.0
    1.0
    V
    I
    S
    = 15A
    , V
    GS
    = 0V
    Reverse Recovery
    Charge
    Q
    rr
    94
    82
    nC
    di/dt
    ~
    700A/μs
    V
    DS
    = 16V, V
    GS
    = 0V, I
    S
    = 15A
    di/dt = 700A/μs
    (with 10BQ040)
    V
    DS
    = 16V, V
    GS
    = 0V, I
    S
    = 15A
    Reverse Recovery
    Charge (with Parallel
    Schottky)
    Q
    rr(s)
    87
    74
    Parameter
    Drain-to-Source
    Breakdown Voltage*
    Min
    30
    Typ
    Max
    Min
    28
    Typ
    Max Units
    Conditions
    BV
    DSS
    V
    V
    GS
    = 0V, I
    D
    = 250μA
    Static Drain-Source
    on Resistance*
    R
    DS
    (on)
    7
    8.5
    10
    12
    m
    V
    GS
    = 4.5V, I
    D
    = 15A
    Gate Threshold Voltage*
    Drain-Source Leakage
    Current*
    V
    GS(th)
    I
    DSS
    1.0
    1.0
    V
    μA
    V
    DS
    = V
    GS
    ,I
    D
    = 250μA
    V
    DS
    = 24V, V
    GS
    = 0
    V
    DS
    = 24V, V
    GS
    = 0,
    Tj = 100°C
    30
    30
    150
    150
    Gate-Source Leakage
    Current*
    I
    GSS
    ±100
    ±100
    nA
    V
    GS
    = ±12V
    Total Gate Chg Cont FET*
    Total Gate Chg Sync FET*
    Q
    G
    Q
    G
    Q
    GS1
    61
    55
    75
    73
    19
    17
    23
    20.5
    V
    GS
    =5V, I
    D
    =15A, V
    DS
    =16V
    V
    GS
    = 5V, V
    DS
    < 100mV
    V
    DS
    = 16V, I
    D
    = 15A
    Pre-Vth
    Gate-Source Charge
    14
    2.7
    Post-Vth
    Gate-Source Charge
    Gate to Drain Charge
    Q
    GS2
    3.5
    1.3
    nC
    Q
    GD
    Q
    sw
    Q
    oss
    R
    G
    t
    d (on)
    t
    r
    t
    d
    (off)
    t
    f
    C
    iss
    C
    oss
    13.5
    4.5
    Switch Chg(Q
    gs2
    + Q
    gd
    )*
    Output Charge*
    17
    25
    22.5
    30
    5.8
    26
    7.0
    31
    V
    DS
    = 16V, V
    GS
    = 0
    Gate Resistance
    Turn-on Delay Time
    Rise Time
    1.1
    19
    9
    1.8
    8
    4
    V
    DD
    = 16V, I
    D
    = 15A
    V
    GS
    = 5V
    Clamped Inductive Load
    ns
    Turn-off Delay Time
    Fall Time
    32
    12
    16
    8
    Input Capacitance
    Output Capacitance
    7300
    900
    1800
    900
    pF
    V
    DS
    = 16V, V
    GS
    = 0
    Reverse Transfer Capacitance C
    rss
    350
    60
    Electrical Characteristics
    Source-Drain Rating & Characteristics
    IRF7809A
    IRF7811A
    Current*
    Notes:
    *
    Repetitive rating; pulse width limited by max. junction temperature.
    Pulse width
    300 μs; duty cycle
    2%.
    When mounted on 1 inch square copper board, t < 10 sec.
    Typ = measured - Q
    Devices are 100% tested to these parameters.
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