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參數資料
| 型號： | IRF7NA2907 |
| 英文描述： | 75V Single N-Channel Hi-Rel MOSFET in a SMD-2 package |
| 中文描述： | 75V的單個N -溝道高可靠性的貼片MOSFET的- 2封裝 |
| 文件頁數： | 2/7頁 |
| 文件大?。?/td> | 112K |
| 代理商： | IRF7NA2907 |
IRF7NA2907
2
www.irf.com
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
Units
Test Conditions
0.5
°C/W
Note: Corresponding Spice and Saber models are available on the Website.
For footnotes refer to the last page
Source-Drain Diode Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulse Source Current (Body Diode)
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
QRR
Reverse Recovery Charge
ton
Forward Turn-On Time
Min Typ
—
—
—
—
—
Max Units
75*
300
0.95
175
850
Test Conditions
—
—
—
—
—
V
ns
nC
T
j
= 25°C, IS = 75A, VGS = 0V
Tj = 25°C, IF = 45A, di/dt
≤
100A/
μ
s
VDD
≤
25V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
* Current is limited by package
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
BVDSS/
TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
Min
75
—
Typ
—
0.08
Max Units
—
—
Test Conditions
VGS = 0V, ID = 250
μ
A
Reference to 25°C, ID = 1.0mA
BVDSS
V
V/°C
—
—
0.0045
VGS = 10V, ID = 75A
2.0
130
—
—
—
—
—
—
4.0
—
20
250
V
VDS = VGS, ID = 250
μ
A
VDS =15V, IDS = 75A
VDS = 75V ,VGS=0V
VDS = 60V,
VGS = 0V, TJ =125°C
VGS = 20V
VGS = -20V
VGS =10V, ID = 45A
VDS = 60V
S (
)
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
375
60
150
40
125
175
75
—
nC
VDD = 38V, ID = 45A,
VGS = 10V, RG = 1.2
Measured from the center of drain
pad to the center of source pad
l
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
12000
2280
610
—
—
—
VGS = 0V, VDS = 25V
f = 1.0MHz
pF
nA
nH
ns
μ
A
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