參數(shù)資料
型號(hào): IRF8010
廠商: International Rectifier
英文描述: HEXFET Power MOSFET
中文描述: HEXFET功率MOSFET
文件頁(yè)數(shù): 4/8頁(yè)
文件大?。?/td> 494K
代理商: IRF8010
IRF8010
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 175 C
T = 25 C
1
10
100
VDS, Drain-to-Source Voltage (V)
10
100
1000
10000
C
100000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Coss
Crss
Ciss
1
10
100
1000
VDS, Drain-to-Source Voltage (V)
0.1
1
10
100
1000
ID
10000
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100μsec
0
20
40
60
80
100
QG Total Gate Charge (nC)
0
2
4
6
8
10
12
VG
VDS= 80V
VDS= 50V
VDS= 20V
ID= 80A
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