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參數(shù)資料
| 型號： | IRF830 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL 500V - 1.35ohm - 4.5A - TO-220 PowerMESH] MOSFET |
| 中文描述： | ? -頻道500V - 1.35ohm - 4.5A -到220 PowerMESH] MOSFET的 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 58K |
| 代理商： | IRF830 |
Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
IRF830
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); parameter T
j
Fig.8. Typical transconductance
g
fs
= f(I
D
); parameter T
j
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 3 A; V
GS
= 10 V
Fig.10. Gate threshold voltage
V
GS(TO)
= f(T
j
); conditions: I
D
= 0.25 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
2
VGS, Gate-Source voltage (Volts)
4
6
8
10
0
5
10
15
PHP4N50
ID, Drain current (Amps)
VDS > ID x RDS(on)max
Tj = 25 C
Tj = 150 C
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
0
5
10
15
0
1
2
3
4
5
6
PHP4N50
ID, Drain current (A)
gfs, Transconductance (S)
Tj = 25 C
150 C
VDS > ID x RDS(on)max
0
1
2
VGS / V
3
4
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 %
98 %
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
Normalised RDS(ON) = f(Tj)
2
1
0
a
1
10
100
1000
10
100
1000
PHP4N50
VDS, Drain-Source voltage (Volts)
Junction capacitances (pF)
Ciss
Coss
Crss
March 1999
4
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF830 | POWER MOSFET |
| IRF830 | 4.5A, 500V, 1.500 Ohm, N-Channel Power MOSFET |
| IRF830PBF | HEXFET Power MOSFET |
| IRF830AL | Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A) |
| IRF830AS | Power MOSFET(Vdss=500V, Rds(on)max=1.40ohm, Id=5.0A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF830 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| IRF830/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power Field Effect Transistor |
| IRF830_R4943 | 功能描述:MOSFET TO-220AB N-Ch Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF8301MTRPBF | 制造商:International Rectifier 功能描述:30V DIRECTFET POWER MOSFET - Tape and Reel 制造商:International Rectifier 功能描述:MOSF N CH 30V 34A DIRECTFET MT 制造商:International Rectifier 功能描述:N-Ch 30V 1.3mOhm Ultra-Low RDSon |
| IRF8302MTR1PBF | 功能描述:MOSFET 30V N-Channel HEXFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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