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參數(shù)資料
| 型號： | IRFBL18N50K |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET(SMPS)(HEXFET 功率MOS場效應(yīng)管(用于開關(guān)模式電源)) |
| 中文描述： | HEXFET功率MOSFET（開關(guān)電源）（馬鞍山的HEXFET功率場效應(yīng)管（用于開關(guān)模式電源）） |
| 文件頁數(shù)： | 2/3頁 |
| 文件大?。?/td> | 29K |
| 代理商： | IRFBL18N50K |
IRFB18N50K
2
www.irf.com
PROVISIONAL
Symbol
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Min. Typ. Max. Units
7.5
–––
–––
–––
–––
–––
–––
–––
–––
20
–––
55
–––
45
–––
45
–––
3000
–––
–––
300
–––
20
Conditions
V
DS
= 50V, I
D
= 11A
I
D
= 18A
V
DS
= 400V
V
GS
= 10V,
V
DD
= 250V
I
D
= 18A
R
G
= 4.3
V
GS
= 10V,
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
110
40
50
–––
–––
–––
–––
S
nC
–––
–––
pF
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Symbol
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
Parameter
Min. Typ. Max. Units
500
–––
–––
0.55
–––
–––
3.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25
°
C, I
D
= 1mA
V
GS
= 10V, I
D
= 11A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125
°
C
V
GS
= 30V
V
GS
= -30V
Drain-to-Source Breakdown Voltage
–––
–––
0.25
5.5
50
250
100
-100
V
V/
°
C
V
μA
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
Static @ T
J
= 25
°
C (unless otherwise specified)
I
GSS
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25
°
C, L = 5.0mH, R
G
= 25
,
I
AS
= 18A,
I
SD
≤
18A, di/dt
≤
TBDA/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150
°
C
Notes:
Pulse width
≤
400μs; duty cycle
≤
2%.
Symbol
E
AS
I
AR
E
AR
Parameter
Typ.
–––
–––
–––
Max.
430
18
20
Units
mJ
A
mJ
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Avalanche Characteristics
Symbol
R
θ
JC
R
θ
JA
Parameter
Typ.
–––
–––
Max.
0.63
40
Units
°
C/W
Junction-to-Case
Junction-to-Ambient (PCB Mounted, steady-state)
Thermal Resistance
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