
Parameter
V
(BR)DSS
R
DS(on)
V
GS(th)
I
DSS
I
GSS
T
J
T
STG
Mechanical Data
Description
Guaranteed (Min/Max)
500V Min.
0.090
Max.
3.0V Min., 5.0V Max.
50μA Max.
± 100nA Max.
-55°C to 150°C Max.
Test Conditions
Drain-to-Source Breakdown Voltage
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Leakage Current
Operating Junction and
Storage Temperature Range
V
GS
= 0V, I
D
= 250μA
V
GS
= 10V, I
D
= 28A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 500V, V
GS
= 0V, T
J
= 25°C
V
GS
= ±30V
Nominal Back Metal Composition, Thickness:
Nominal Front Metal Composition, Thickness:
Dimensions:
Wafer Diameter:
Wafer Thickness:
Relevant Die Mechanical Drawing Number
Minimum Street Width
Reject Ink Dot Size
Recommended Storage Environment:
Cr-NiV-Ag ( 0.1μm-0.2μm-0.5μm )
Al with 1% Si (0.004 mm)
0.315" x 0.470" [ 8.00 mm x 11.94 mm ]
150 mm
0.375 mm ± 0.025 mm
01-5444
0.004"
0.005" Diameter Minimum
Store in original container, in dessicated
nitrogen, with no contamination
For optimum electrical results, die attach
temperature should not exceed 300 °C
IRFPS43N50K
Recommended Die Attach Conditions:
Referenced Package Part:
Die Outline
500V
R
DS(on)
=0.090
6" Wafer
07/18/01
Electrical Characteristics
IRFC43N50KB
HEXFET
Power MOSFET Die
in Wafer Form
S
D
G
www.irf.com
1
* Notes: Electrical characteristics are reported for the reference packaged part (see above) and cannot guaranteed in die sales form due
to variations in packaging materials, dimension.
1.65
[.065]
11.94
[.470]
8.00
[.315]
0.65
[.026]
0.49
[.019]
2.08
[.082]
S
G
1. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
2. CONTROLLING DIMENSION: [INCH].
4. DIMENSIONAL TOLERANCES:
3. LETTER DESIGNATION:
S = SOURCE
NOTES:
5. DIE THICKNESS = 0.254 [.010]
WIDTH
&
LENGTH
< [.050] TOLERANCE = + /- [.004]
> 1.270 TOLERANCE = + /- 0.203
> [.050] TOLERANCE = + /- [.008]
> [.0250] TOLERANCE = + /- [.0010]
> 0.635 TOLERANCE = + /- 0.025
< [.0250] TOLERANCE = + /- [.0005]
< 0.635 TOLERANCE = + /- 0.013
< 1.270 TOLERANCE = + /- 0.102
&
LENGTH
OVERALL DIE:
WIDTH
BONDING PADS:
SK = SOURCE KELVIN
IS = CURRENTSENSE
G = GATE
E = EMITTER
PD - 94242