參數(shù)資料
型號(hào)： IRFD9110
廠商： Harris Corporation
英文描述： -0.6A and -0.7A, -80V and -100V, 1.2 and 1.6 Ohm, P-Channel Power MOSFETs
中文描述： - 0.6A的和- 0.7A的，- 80V和- 100V的，1.2和1.6歐姆，P溝道功率MOSFET
文件頁(yè)數(shù)： 3/7頁(yè)
文件大小： 93K
代理商： IRFD9110
2002 Fairchild Semiconductor Corporation
IRFD9110 Rev. B
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Continuous Source to Drain Current
I
SD
Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
-
-
-0.7
A
Pulse Source to Drain Current
(Note 3)
I
SDM
-
-
-3.0
A
Source to Drain Diode Voltage (Note 2)
V
SD
T
J
= 25
o
C, I
SD
= -0.7A, V
GS
= 0V, (Figure 12)
-
-
-1.5
V
Reverse Recovery Time
t
rr
T
J
= 150
o
C, I
SD
= -0.7A, dI
SD
/dt = 100A/
μ
s
-
120
-
ns
Reverse Recovery Charge6466
Q
RR
T
J
= 150
o
C, I
SD
= -0.7A, dI
SD
/dt = 100A/
μ
s
-
6.0
-
μ
C
NOTES:
2. Pulse test: pulse width
3. V
DD
= 25V, starting T
≤
= 25
300
μ
C, L = 582mH, R
s, duty cycle
≤
2%.
J
o
G
= 25
,
peak I
AS
= 0.7A. See Figures 14, 15.
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
FIGURE 4. OUTPUT CHARACTERISTICS
G
D
S
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0.0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
T
A
, AMBIENT TEMPERATURE (
o
C)
50
75
100
25
150
-1.0
-0.8
-0.6
0
-0.4
I
D
D
-0.2
125
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
1
I
D
,
100
0.1
10
1
0.01
10
μ
s
DC
1ms
10ms
100ms
LIMITED BY r
DS(ON)
T
C
= 25
o
C
AREA MAY BE
OPERATION IN THIS
T
J
= MAX RATED
100
μ
s
I
D
,
0
-10
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-20
-30
-40
-1
-2
-3
-4
-5
-50
0
V
GS
= -5V
V
GS
= -7V
V
GS
= -8V
V
GS
= -10V
V
GS
= -9V
V
GS
= -6V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
IRFD9110
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IRFD9120 功能描述:MOSFET P-Chan 100V 1.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFD9120PBF 功能描述:MOSFET P-Chan 100V 1.0 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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