參數(shù)資料
型號(hào)： IRFDC20
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=0.32A)
中文描述： 功率MOSFET（減振鋼板基本\u003d 600V電壓的Rds（on）\u003d 4.4ohm，身份證\u003d 0.32A）
文件頁數(shù)： 1/8頁
文件大小： 464K
代理商： IRFDC20
Parameter
Max.
0.32
0.20
2.6
1.0
0.0083
±20
50
0.32
0.10
3.0
-55 to + 150
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10 V
Continuous Drain Current, V
GS
@ 10 V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
°C
300 (1.6mm from case)
IRFDC20
HEXFET
Power MOSFET
PD -9.1228
Revision 0
V
DSS
= 600V
R
DS(on)
= 4.4
I
D
= 0.32A
Absolute Maximum Ratings
Thermal Resistance
Parameter
Min.
—
Typ.
—
Max.
120
Units
°C/W
R
θ
JA
Junction-to-Ambient
Dynamic dv/dt Rating
Repetitive Avalanche Rated
For Automatic Insertion
End Stackable
Fast Switching
Ease of paralleling
Simple Drive Requirements
Third Generation HEXFETs from International Rectifier provide the designer
with the best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The 4-pin DIP package is a low-cost machine-insertable case style which can be
stacked in multiple combinations on standard 0.1 inch pin centers. The dual drain
serves as a thermal link to the mounting surface for power dissipation levels up to
1 watt.
Description
HD-1
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