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參數(shù)資料
| 型號： | IRFE024 |
| 英文描述： | N-Channel Power MOSFET(Vdss:60V,Id(cont):6.7A,Rds(on):0.15Ω)(N溝道功率MOS場效應(yīng)管(Vdss:60V,Id(cont):6.7A,Rds(on):0.15Ω)) |
| 中文描述： | N溝道功率MOSFET（減振鋼板基本：60V的，身份證（續(xù)）：6.7A時，RDS（上）：0.15Ω）（不適用馬鞍山溝道功率場效應(yīng)管（減振鋼板基本：60V的，身份證（續(xù)）：6.7A時，RDS（對）：0.15Ω）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 23K |
| 代理商： | IRFE024 |
IRFE024
02/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukParameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
60
0.068
0.15
0.17
4
2
4.3
25
250
100
–100
640
340
69
9.0
2.0
6.0
26
5.0
13
14
70
37
45
6.7
27
2.3
200
1.9
Negligible
1.8
4.3
9.1
26
V
GS
= 0
Reference to 25°C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
3
15V
V
GS
= 0
I
D
= 1mA
I
D
= 4.2A
I
D
= 6.7A
I
D
= 250
m
A
I
DS
= 4.2A
V
DS
= 0.8BV
DSS
T
J
= 125°C
V
GS
= 20V
V
GS
= –20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 6.7A
V
DS
= 0.5BV
DSS
V
DD
= 30V
I
D
= 6.7A
R
G
= 7.5
W
I
S
= 6.7A
V
GS
= 0
I
F
= 6.7A
d
i
/ d
t
￡
100A/
m
s V
DD
￡
50V
T
J
= 25°C
T
J
= 25°C
ELECTRICAL CHARACTERISTICS
(Tcase= 25°C unless otherwise stated)
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain – Source On–State
Resistance
1
Gate Threshold Voltage
Forward Transconductance
1
Zero Gate Voltage Drain Current
Forward Gate
– Source Leakage
Reverse Gate
– Source Leakage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn–On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
2
Diode Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
1
Forward Turn–On Time
PACKAGE CHARACTERISTICS
V
V/°C
W
V
S (
é
)
m
A
nA
pF
nC
ns
A
V
ns
m
C
nH
°C/W
BV
DSS
D
BV
DSS
D
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
R
q
JC
R
q
JPC
Notes
1) Pulse Test: Pulse Width
￡
300ms,
d ￡
2%
2) Repetitive Rating – Pulse width limited by maximum junction temperature.
Internal Drain Inductance
(measured from 6mm down drain lead to centre of die)
Internal Source Inductance
(from 6mm down source lead to source bond pad)
THERMAL CHARACTERISTICS
Thermal Resistance Junction – Case
Thermal Resistance Junction – PC Board
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFE024 | N-CHANNEL POWER MOSFET |
| IRFE113 | TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 100V V(BR)DSS | 800MA I(D) | DIP |
| IRFE130 | N-Channel Power MOSFET(Vdss:100V,Id(cont):7.44A,Rds(on):0.207Ω)(N溝道功率MOS場效應(yīng)管(Vdss:100V,Id(cont):7.44A,Rds(on):0.207Ω)) |
| IRFE130 | N-CHANNEL POWER MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFE024SCV | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 6.7A 18PIN LCC - Bulk |
| IRFE024SCX | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 60V 6.7A 18LLCC - Bulk |
| IRFE110 | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 100V 3.5A 18-Pin LLCC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 100V 3.5A 18PIN LCC - Bulk 制造商:International Rectifier 功能描述:N CHANNEL MOSFET, 100V, 3.5A, LCC; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:100V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No |
| IRFE110-JQR-B | 制造商:Semelab (TT electronics) 功能描述: |
| IRFE113 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | ARRAY | N-CHANNEL | 100V V(BR)DSS | 800MA I(D) | DIP |
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