參數(shù)資料
    型號(hào)： IRFE130
    英文描述： N-Channel Power MOSFET(Vdss:100V,Id(cont):7.44A,Rds(on):0.207Ω)(N溝道功率MOS場效應(yīng)管(Vdss:100V,Id(cont):7.44A,Rds(on):0.207Ω))
    中文描述： N溝道功率MOSFET（減振鋼板基本：100V的，身份證（續(xù)）：7.44A，的Rds（on）：0.207Ω）（不適用馬鞍山溝道功率場效應(yīng)管（減振鋼板基本：100V的，身份證（續(xù)）：7.44A時(shí)，RDS（對）：0.207Ω））
    文件頁數(shù)： 2/2頁
    文件大小： 17K
    代理商： IRFE130
    IRFE130
    10/98
    Semelab plc.
    Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
    Website http://www.semelab.co.uk
    Parameter
    STATIC ELECTRICAL RATINGS
    Test Conditions
    Min.
    Typ.
    Max.
    Unit
    100
    0.10
    0.18
    0.207
    4
    2
    3
    25
    250
    100
    –100
    650
    240
    44
    12.8
    1.0
    3.8
    28.5
    6.3
    16.6
    30
    75
    40
    45
    7.4
    30
    1.5
    300
    3.0
    Negligible
    1.8
    4.3
    5.8
    19
    V
    GS
    = 0
    Reference to 25°C
    I
    D
    = 1mA
    V
    GS
    = 10V
    V
    GS
    = 10V
    V
    DS
    = V
    GS
    V
    DS
    ≥
    15V
    V
    GS
    = 0
    I
    D
    = 1mA
    I
    D
    = 4.7A
    I
    D
    = 7.4A
    I
    D
    = 250mA
    I
    DS
    = 4.7A
    V
    DS
    = 0.8BV
    DSS
    T
    J
    = 125°C
    V
    GS
    = 20V
    V
    GS
    = –20V
    V
    GS
    = 0
    V
    DS
    = 25V
    f = 1MHz
    V
    GS
    = 10V
    I
    D
    = 7.4A
    V
    DS
    = 0.5BV
    DSS
    V
    DD
    = 50V
    I
    D
    = 7.4A
    R
    G
    = 7.5
    I
    S
    = 7.4A
    V
    GS
    = 0
    I
    F
    = 7.4A
    d
    i
    / d
    t
    ≤
    100A/
    μ
    s V
    DD
    ≤
    50V
    T
    J
    = 25°C
    T
    J
    = 25°C
    ELECTRICAL CHARACTERISTICS
    (Tcase= 25°C unless otherwise stated)
    Drain – Source Breakdown Voltage
    Temperature Coefficient of
    Breakdown Voltage
    Static Drain – Source On–State
    Resistance
    1
    Gate Threshold Voltage
    Forward Transconductance
    1
    Zero Gate Voltage Drain Current
    Forward Gate
    – Source Leakage
    Reverse Gate
    – Source Leakage
    DYNAMIC CHARACTERISTICS
    Input Capacitance
    Output Capacitance
    Reverse Transfer Capacitance
    Total Gate Charge
    Gate – Source Charge
    Gate – Drain (“Miller”) Charge
    Turn–On Delay Time
    Rise Time
    Turn–Off Delay Time
    Fall Time
    SOURCE – DRAIN DIODE CHARACTERISTICS
    Continuous Source Current
    Pulse Source Current
    2
    Diode Forward Voltage
    1
    Reverse Recovery Time
    Reverse Recovery Charge
    1
    Forward Turn–On Time
    PACKAGE CHARACTERISTICS
    V
    V/°C
    V
    S (
    é
    )
    μ
    A
    nA
    pF
    nC
    ns
    A
    V
    ns
    μ
    C
    nH
    °C/W
    BV
    DSS
    BV
    DSS
    T
    J
    R
    DS(on)
    V
    GS(th)
    g
    fs
    I
    DSS
    I
    GSS
    I
    GSS
    C
    iss
    C
    oss
    C
    rss
    Q
    g
    Q
    gs
    Q
    gd
    t
    d(on)
    t
    r
    t
    d(off)
    t
    f
    I
    S
    I
    SM
    V
    SD
    t
    rr
    Q
    rr
    t
    on
    L
    D
    L
    S
    R
    θ
    JC
    R
    θ
    JPC
    Notes
    1) Pulse Test: Pulse Width
    ≤
    300ms,
    δ ≤
    2%
    2) Repetitive Rating – Pulse width limited by maximum junction temperature.
    Internal Drain Inductance
    (measured from 6mm down drain lead to centre of die)
    Internal Source Inductance
    (from 6mm down source lead to source bond pad)
    THERMAL CHARACTERISTICS
    Thermal Resistance Junction – Case
    Thermal Resistance Junction – PC Board
    相關(guān)PDF資料
    PDF描述
    IRFE130 N-CHANNEL POWER MOSFET
    IRFE210 TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 1.8A I(D) | LLCC
    IRFE230 N-Channel Power MOSFET(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω)(N溝道功率MOS場效應(yīng)管(Vdss:200V,Id(cont):4.8A,Rds(on):0.46Ω))
    IRFE230 N-CHANNEL POWER MOSFET
    IRFE320 TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 1.8A I(D) | LLCC
    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
    IRFE210 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 2.25A 18PIN LCC - Bulk
    IRFE220 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 2.8A 18-Pin LLCC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 2.8A 18PIN LCC - Bulk
    IRFE220_07 制造商:IRF 制造商全稱:International Rectifier 功能描述:REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18)
    IRFE230 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 5.5A 18-Pin LLCC 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 5.5A 18PIN LCC - Bulk
    IRFE310 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 400V 1.25A 18PIN LCC - Bulk
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