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參數(shù)資料
| 型號(hào)： | IRFE210 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 1.8A I(D) | LLCC |
| 中文描述： | 晶體管| MOSFET的| N溝道| 200伏五（巴西）直| 1.8AI（四）| LLCC |
| 文件頁數(shù)： | 2/7頁 |
| 文件大小： | 199K |
| 代理商： | IRFE210 |
IRFE210
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
RthJ-PCB
Junction to Case
Junction to PC Board
—
—
—
— 27
"""
Soldered to a copper clad PC board
8.3
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
—
—
—
—
2.25
9.0
VSD
trr
QRR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
1.5
350
0.66
V
nS
μc
T
j
= 25°C, IS =2.25A, VGS = 0V
Tj = 25°C, IF =2.25A, di/dt
≤
100A/
μ
s
VDD
≤
50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
200
—
Typ
—
0.23
Max Units
—
—
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
2.0
1.4
—
—
—
— 1.725
VGS =10V, ID =2.25A
— 4.0 V VDS = VGS, ID =250μA
—
—
S (
)
—
25
—
250
VGS = 0V, TJ = 125°C
—
100
—
-100
—
6.2
—
1.2
nC
—
5.0
—
15
—
20
—
30
—
20
6.1
—
nH
Measured from the center of
drain pad to center of source
pad
1.5
VGS = 10V, ID =1.5A
VGS(th)
gfs
IDSS
VDS > 15V, IDS =1.5A
VDS=160V, VGS=0V
VDS =160V
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
VGS =20V
VGS =-20V
VGS =10V, ID= 2.25A
VDS =100V
VDD =100V, ID =2.25A,
RG =7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
150
57
15
VGS = 0V, VDS =25V
f = 1.0MHz
—
—
pF
nA
n s
μ
A
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