參數(shù)資料
型號(hào): IRFE210
廠商: International Rectifier
英文描述: HEXFET Transistor(HEXFET 晶體管)
中文描述: 的HEXFET晶體管(之HEXFET晶體管)
文件頁數(shù): 4/8頁
文件大小: 165K
代理商: IRFE210
4
www.irf.com
IRFE210, JANTX-, JANTXV-, 2N6784U Device
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
0
60
120
180
240
300
V , Drain-to-Source Voltage (V)
C
V
C
C
C
=
=
=
=
0V,
C
C
C
ds
f = 1MHz
+ C
gd ,
+ C
C SHORTED
GS
iss
rss
oss
gs
gd
gd
C
iss
C
oss
C
rss
0.1
1
10
0.4
0.6
0.8
1.0
1.2
1.4
V ,Source-to-Drain Voltage (V)
I
S
V = 0 V
T = 25 C
T = 150 C
°
0.1
1
10
100
1
10
100
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
Single Pulse
T
T
= 150°
= 25°
J
C
V , Drain-to-Source Voltage (V)
D
I
10us
100us
1ms
10ms
0
2
4
6
8
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V
G
FOR TEST CIRCUIT
SEE FIGURE
I =
13
2.25A
V
= 40V
DS
V
= 100V
DS
V
= 160V
DS
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