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參數(shù)資料
| 型號(hào)： | IRFE9210 |
| 廠商： | International Rectifier |
| 英文描述： | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) |
| 中文描述： | 重復(fù)性雪崩和DV /受好評(píng)的HEXFET三極管表面貼裝（持有LCC - 18 DT）的 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 134K |
| 代理商： | IRFE9210 |
IRFE9210
2
www.irf.com
Thermal Resistance
Parameter
Min Typ Max
Units
Test Conditions
RthJC
RthJ-PCB
Junction to Case
Junction to PC Board
—
—
—
— 27
"""
Soldered to a copper clad PC board
11
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ
Max Units
Test Conditions
IS
ISM
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
—
—
—
—
-1.3
-5.2
VSD
trr
QRR
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
—
—
—
—
—
—
-5.8
300
3.0
V
nS
μc
T
j
= 25°C, IS = -1.3A, VGS = 0V
Tj = 25°C, IF = -1.3A, di/dt
≤
-100A/
μ
s
VDD
≤
-50V
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
A
For footnotes refer to the last page
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
-200
—
Typ
—
-0.22
Max Units
—
—
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
BVDSS
BVDSS/
TJ
V
V/°C
RDS(on)
—
—
-2.0
0.7
—
—
—
— 3.45
VGS = -10V, ID = -1.3A
— - 4.0 V VDS = VGS, ID = -250μA
—
—
S (
)
VDS > -15V, IDS = -0.84A
—
-25
—
-250
VGS = 0V, TJ = 125°C
—
-100
—
100
—
8.9
—
2.1
nC
—
3.9
—
15
VDD =-100V, ID = -1.3A,
—
25
—
40
—
15
6.1
—
nH
Measured from the center of
drain pad to center of source
pad
3.0
VGS = -10V, ID = -0.84A
VGS(th)
gfs
IDSS
VDS= -160V, VGS= 0V
VDS =-160V
IGSS
IGSS
Qg
Qgs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
VGS =-20V
VGS =20V
VGS =-10V, ID= -1.3A
VDS =-100V
RG =7.5
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
170
54
17
VGS = 0V, VDS = -25V
f = 1.0MHz
—
—
pF
nA
n s
μ
A
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