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參數(shù)資料
| 型號： | IRFF320 |
| 廠商： | INTERSIL CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 2.5A, 400V, 1.800 Ohm, N-Channel Power MOSFET |
| 中文描述： | 2.5 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 325K |
| 代理商： | IRFF320 |
4
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
FIGURE 5. OUTPUT CHARACTERISTICS
FIGURE 6. SATURATION CHARACTERISTICS
FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2
μ
s pulse is minimal.
FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
Typical Performance Curves
Unless Otherwise Specified
(Continued)
10
1
10
10
2
OPERATION IN THIS
REGION IS LIMITED
BY r
DS(ON)
0.01
I
D
,
T
C
= 25
o
C
T
= MAX RATED
SINGLE PULSE
DC
20
10
μ
s
100
μ
s
1ms
10ms
100ms
10
3
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.1
1
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0
300
6
4
3
0
2
I
D
,
1
V
GS
= 5V
100
200
5
80
μ
s PULSE TEST
V
GS
= 4.5V
V
GS
= 4V
V
GS
= 5.5V
V
GS
= 10V
V
GS
= 6V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
4
8
12
16
0
20
5
4
3
0
2
I
D
,
80
μ
s PULSE TEST
1
V
GS
= 5V
V
GS
= 4.5V
V
GS
= 4V
V
GS
= 5.5V
V
GS
= 6V
V
GS
= 10V
V
DS
> I
D(ON)
x r
DS(ON)MAX
80
μ
s PULSE TEST
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
5
3
1
0
0
2
4
6
1
5
2
4
6
3
T
J
= 125
o
C
T
J
= 25
o
C
T
J
= -55
o
C
I
D
, DRAIN CURRENT (A)
2
4
6
8
0
10
4
3
0
2
r
D
,
1
V
GS
= 10V
12
5
6
V
GS
= 20V
2
μ
s PULSE TEST
O
)
2.2
1.4
0.6
0
160
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 1.25A
V
GS
= 10V
1.8
1.0
0.2
-40
40
80
120
O
IRFF320
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFF320R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.5A I(D) | TO-205AF |
| IRFF321 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFF321R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.5A I(D) | TO-205AF |
| IRFF322 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFF322R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2A I(D) | TO-205AF |
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