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參數(shù)資料
| 型號(hào)： | IRFM210 |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | 200V N-Channel MOSFET |
| 中文描述： | 200伏N溝道MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 705K |
| 代理商： | IRFM210 |
2001 Fairchild Semiconductor Corporation
November 2001
Rev. B, November 2001
I
IRFM210B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switching DC/DC converters,
switch mode power supplies, DC-AC converters for
uninterrupted power supply and motor control.
Features
0.77A, 200V, R
DS(on)
= 1.5
@V
GS
= 10 V
Low gate charge ( typical 7.2 nC)
Low Crss ( typical 6.8 pF)
Fast switching
Improved dv/dt capability
! "
!
!
S
!
"
"
D
G
SOT-223
IRFM Series
G
D
S
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
IRFM210B
200
0.77
0.61
6.0
±
30
40
0.77
0.2
5.5
2.0
0.016
-55 to +150
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 70°C)
- Pulsed
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
T
L
300
°C
Symbol
R
θ
JA
* When mounted on the minimum pad size recommended (PCB Mount)
Parameter
Typ
--
Max
61
Units
°C
/
W
Thermal Resistance, Junction-to-Ambient *
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFM210B | 200V N-Channel MOSFET |
| IRFM214B | 250V N-Channel MOSFET |
| IRFM220A | N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場(chǎng)效應(yīng)管（漏源電壓為200V，導(dǎo)通電阻為0.8Ω，漏電流為1.13A）) |
| IRFM220B | 200V N-Channel MOSFET |
| IRFM224B | 250V N-Channel MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFM210A | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Advanced Power MOSFET (200V, 1.5ohm, 0.77A) |
| IRFM210B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:200V N-Channel MOSFET |
| IRFM210BTF_FP001 | 功能描述:MOSFET 200V Single RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFM214A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 640MA I(D) | SOT-223 |
| IRFM214B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:250V N-Channel MOSFET |
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