參數(shù)資料
型號(hào)： IRFM240
廠商： International Rectifier
英文描述： POWER MOSFET THRU-HOLE (TO-254AA)
中文描述： 功率MOSFET的通孔（對(duì)254AA）
文件頁(yè)數(shù)： 2/2頁(yè)
文件大小： 19K
代理商： IRFM240
Document Number 4145
Issue 1
IRFM240
2N7219
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Parameter
STATIC ELECTRICAL RATINGS
Test Conditions
Min.
Typ.
Max.
Unit
V
GS
= 0
Reference to 25
°
C
I
D
= 1mA
V
GS
= 10V
V
GS
= 10V
V
DS
= V
GS
V
DS
≥
15V
V
GS
= 0
I
D
= 1mA
I
D
= 11A
I
D
= 18A
I
D
= 250
μ
A
I
DS
= 11A
V
DS
= 160V
T
J
= 125
°
C
V
GS
= 20V
V
GS
=
–
20V
V
GS
= 0
V
DS
= 25V
f = 1MHz
V
GS
= 10V
I
D
= 18A
V
DS
= 100V
V
DD
= 100V
I
D
= 18A
R
G
= 9.1
V
GS
= 10V
I
S
= 18A
V
GS
= 0
I
F
= 18A
d
i
/ d
t
≤
100A/
μ
s V
DD
≤
50V
T
J
= 25
°
C
T
J
= 25
°
C
ELECTRICAL CHARACTERISTICS
(T
J
= 25
°
C unless otherwise stated)
Drain
–
Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
Static Drain
–
Source On
–
State
Resistance
2
Gate Threshold Voltage
Forward Transconductance
2
Zero Gate Voltage Drain Current
Forward Gate
–
Source Leakage
Reverse Gate
–
Source Leakage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate
–
Source Charge
Gate
–
Drain (
“
Miller
”
) Charge
Turn
–
On Delay Time
Rise Time
Turn
–
Off Delay Time
Fall Time
SOURCE – DRAIN DIODE CHARACTERISTICS
Continuous Source Current
Pulse Source Current
1
Diode Forward Voltage
2
Reverse Recovery Time
2
Reverse Recovery Charge
2
Forward Turn
–
On Time
PACKAGE CHARACTERISTICS
200
0.29
0.18
0.25
4.0
2.0
6.1
25
250
100
–
100
1300
400
130
60
10.6
37.6
20
105
58
67
18
72
1.5
500
5.3
Negligible
4.0
4.0
V
V/
°
C
V
(
)
S
(
μ
A
nA
pF
nC
ns
A
V
ns
μ
C
nH
BV
DSS
BV
DSS
T
J
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
I
GSS
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
L
D
L
S
1) Repetitive Rating
–
Pulse width limited by Maximum Junction Temperature
2) Pulse Test: Pulse Width
≤
300
μ
s,
δ ≤
2%.
DYNAMIC CHARACTERISTICS
Internal Drain Inductance
Measured from drain lead (6mm / 0.25in from package) to
Internal Source Inductance
source lead (6mm / 0.25in from package).
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參數(shù)描述
IRFM240D 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-254VAR
IRFM240U 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 18A I(D) | TO-254VAR
IRFM250 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 27.4A 3-Pin(3+Tab) TO-254AA 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 27.4A 3PIN TO-254AA - Bulk 制造商:International Rectifier 功能描述:N CH MOSFET, 200V, 27.4A, TO-254AA; Transistor Polarity:N Channel; Continuous Drain Current Id:27.4A; Drain Source Voltage Vds:200V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V ;RoHS Compliant: No
IRFM250_06 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:N–CHANNEL POWER MOSFET
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