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參數(shù)資料
| 型號(hào)： | IRFN9240SMD |
| 英文描述： | P-Channel Power MOSFET(Vdss:-200V,Id(cont):-8A,Rds(on):0.051Ω)(P溝道功率MOS場效應(yīng)管(Vdss:-200V,Id(cont):-8A,Rds(on):0.051Ω)) |
| 中文描述： | P溝道功率MOSFET（減振鋼板基本：- 200伏，身份證（續(xù)）：- 8A型，的Rds（on）：0.051Ω）性（P溝道功率馬鞍山場效應(yīng)管（減振鋼板基本：- 200伏，身份證（續(xù)）：- 8A型，的RDS（on）：0.051Ω）） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 23K |
| 代理商： | IRFN9240SMD |
IRFN9240SMD
Prelim. 7/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukV
GS
I
D
I
D
I
DM
P
D
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
Single Pulse Avalanche Energy
2
Peak Diode Recovery
3
Operating and Storage Temperature Range
Package Mounting Surface Temperature (for 5 sec)
Thermal Resistance Junction to Case
Thermal Resistance Junction to PCB (Typical)
(V
GS
= 0 , T
case
= 25°C)
(V
GS
= 0 , T
case
= 100°C)
E
AS
dv/dt
T
J
, T
stg
T
L
R
q
JC
R
q
J–PCB
±20V
–8.0A
–5.0A
–32A
75W
0.6W/°C
500mJ
–5.5V/ns
–55 to 150°C
300°C
1.67°C/W
4°C/W
MECHANICAL DATA
Dimensions in mm (inches)
P–CHANNEL
POWER MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
FEATURES
HERMETICALLY SEALED SURFACE
MOUNT PACKAGE
SMALL FOOTPRINT – EFFICIENT USE OF
PCB SPACE.
SIMPLE DRIVE REQUIREMENTS
LIGHTWEIGHT
HIGH PACKING DENSITIES
SMD1 PACKAGE
Pad 1 – Source
Pad 2 – Drain
Pad 3 – Gate
Notes
1) Pulse Test: Pulse Width
￡
300ms,
d ￡
2%
2) @ V
DD
= –50V , L
3
11.7mH , R
G
= 25
W
, Peak I
L
= –8A , Starting T
J
= 25°C
3) @ I
SD
￡
–8A , di/dt
￡
–150A/
m
s , V
DD
￡
BV
DSS
, T
J
￡
150°C , SUGGESTED R
G
= 9.1
W
Note:
IRFxxxSM also available with
pins 1 and 3 reversed.
V
DSS
I
D(cont)
R
DS(on)
–200V
–8A
0.051
W
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