參數(shù)資料
型號(hào)： IRFP150N
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET
中文描述： 44 A, 100 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
文件頁數(shù)： 2/10頁
文件大?。?/td> 148K
代理商： IRFP150N
2002 Fairchild Semiconductor Corporation
IRFP150N Rev. B
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
OFF STATE SPECIFICATIONS
Drain to Source Breakdown Voltage
BV
DSS
I
D
= 250
μ
A, V
GS
= 0V (Figure 11)
100
-
-
V
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 95V, V
GS
= 0V
-
-
1
μ
A
V
DS
= 90V, V
GS
= 0V, T
C
= 150
o
C
-
-
250
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
=
±
20V
-
-
±
100
nA
ON STATE SPECIFICATIONS
Gate to Source Threshold Voltage
V
GS(TH)
V
GS
= V
DS
, I
D
= 250
μ
A (Figure 10)
2
-
4
V
Drain to Source On Resistance
r
DS(ON)
I
D
= 44A, V
GS
= 10V (Figure 9)
-
0.0255
0.030
THERMAL SPECIFICATIONS
Thermal Resistance Junction to Case
R
θ
JC
TO-247
-
-
0.97
o
C/W
o
C/W
Thermal Resistance Junction to
Ambient
R
θ
JA
-
-
30
SWITCHING SPECIFICATIONS
(V
GS
= 10V)
Turn-On Time
t
ON
V
V
R
(Figures 18, 19)
DD
GS
GS
= 50V, I
=
10V,
= 6.2
D
= 44A
-
-
130
ns
Turn-On Delay Time
t
d(ON)
-
11
-
ns
Rise Time
t
r
-
75
-
ns
Turn-Off Delay Time
t
d(OFF)
-
37
-
ns
Fall Time
t
f
-
61
-
ns
Turn-Off Time
t
OFF
-
-
150
ns
GATE CHARGE SPECIFICATIONS
Total Gate Charge
Q
g(TOT)
V
GS
= 0V to 20V
V
I
D
I
g(REF)
(Figures 13, 16, 17)
DD
= 44A,
= 50V,
= 1.0mA
-
90
108
nC
Gate Charge at 10V
Q
g(10)
V
GS
= 0V to 10V
-
48
58
nC
Threshold Gate Charge
Q
g(TH)
V
GS
= 0V to 2V
-
3.1
3.8
nC
Gate to Source Gate Charge
Q
gs
-
6.5
-
nC
Gate to Drain "Miller" Charge
Q
gd
-
17
-
nC
CAPACITANCE SPECIFICATIONS
Input Capacitance
C
ISS
V
f = 1MHz
(Figure 12)
DS
= 25V, V
GS
= 0V,
-
1700
-
pF
Output Capacitance
C
OSS
-
460
-
pF
Reverse Transfer Capacitance
C
RSS
-
145
-
pF
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Source to Drain Diode Voltage
V
SD
I
SD
= 44A
-
-
1.25
V
I
SD
= 22A
-
-
1.00
V
Reverse Recovery Time
t
rr
I
SD
= 44A, dI
SD
/dt = 100A/
μ
s
-
-
105
ns
Reverse Recovered Charge
Q
RR
I
SD
= 44A, dI
SD
/dt = 100A/
μ
s
-
-
305
nC
IRFP150N
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