參數(shù)資料
型號: IRFP450B
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 500V N-Channel MOSFET
中文描述: 14 A, 500 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-3P, 3 PIN
文件頁數(shù): 4/8頁
文件大?。?/td> 707K
代理商: IRFP450B
2001 Fairchild Semiconductor Corporation
Rev. B, November 2001
I
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
-2
10
-1
10
0
Notes :
1. Z
(t) = 0.61
/W M ax.
2. D uty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θ
JC
(t)
single pulse
D =0.5
0.02
0.01
0.2
0.05
0.1
Z
θ
(
t
1
, S quare W ave Pulse D uration [sec]
25
50
75
100
125
150
0
3
6
9
12
15
I
D
,
T
C
, Case Temperature [
]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10
μ
s
DC
10 ms
1 ms
100
μ
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
2. T
= 150
3. Single Pulse
o
C
o
C
I
D
,
V
DS
, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
= 10 V
2. I
D
= 7.0 A
R
D
,
D
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250
μ
A
B
D
,
D
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 11. Transient Thermal Response Curve
t
1
P
DM
t
2
相關(guān)PDF資料
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IRFP450 N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場效應(yīng)管(漏源電壓為500V,導(dǎo)通電阻為0.4Ω,漏電流為14A))
IRFP460 N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場效應(yīng)管(漏源電壓為500V,導(dǎo)通電阻為0.25Ω,漏電流為22A))
IRFR014 N-Channel Power MOSFET(N溝道增強(qiáng)型功率MOS場效應(yīng)管(漏源電壓為60V,導(dǎo)通電阻為0.14Ω,漏電流為8.2A))
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IRFR9024 P-Channel Enhancement Mode Field Effect Transistor(-8.8A,-60V,0.28Ω)(P溝道增強(qiáng)型MOS場效應(yīng)管(漏電流-8.8A, 漏源電壓-60V,導(dǎo)通電阻0.28Ω))
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