- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377510 > IRFP90N20D (International Rectifier) CAP,TANT,100UF,10V,LOW ESR,D PKG PDF資料下載
參數(shù)資料
| 型號(hào)： | IRFP90N20D |
| 廠商： | International Rectifier |
| 英文描述： | CAP,TANT,100UF,10V,LOW ESR,D PKG |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 200V的電壓，的Rds（on）最大值\u003d 0.023ohm，身份證\u003d 94A章） |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 89K |
| 代理商： | IRFP90N20D |
IRFP90N20D
2
www.irf.com
Parameter
Min. Typ. Max. Units
39
–––
–––
180 270 I
D
= 56A
–––
45
67
–––
87
130
–––
23
–––
–––
160
–––
–––
43
–––
–––
79
–––
–––
6040
–––
–––
1070
–––
–––
170
–––
–––
8350
–––
–––
420
–––
–––
870
–––
Conditions
V
DS
= 50V, I
D
= 56A
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
S
nC
V
DS
= 160V
V
GS
= 10V,
V
DD
= 100V
I
D
= 56A
R
G
= 1.2
V
GS
= 10V
V
GS
= 0V
V
DS
= 25V
= 1.0MHz
V
GS
= 0V, V
DS
= 1.0V,
= 1.0MHz
V
GS
= 0V, V
DS
= 160V,
= 1.0MHz
V
GS
= 0V, V
DS
= 0V to 160V
pF
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
Parameter
Typ.
–––
–––
–––
Max.
1010
56
58
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Avalanche Characteristics
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 56A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 56A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
230
1.9
1.5
340
2.8
V
ns
μC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Diode Characteristics
94
380
A
Static @ T
J
= 25
°
C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
–––
0.24
–––
V/
°
C Reference to 25
°
C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
V
GS(th)
Gate Threshold Voltage
–––
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Min. Typ. Max. Units
200
–––
Conditions
V
GS
= 0V, I
D
= 250μA
–––
V
–––
0.023
–––
–––
–––
–––
–––
V
V
GS
= 10V, I
D
= 56A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 200V, V
GS
= 0V
V
DS
= 160V, V
GS
= 0V, T
J
= 150
°
C
V
GS
= 30V
V
GS
= -30V
3.0
5.0
25
250
100
-100
μA
nA
I
GSS
I
DSS
Drain-to-Source Leakage Current
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFP9140N | Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A) |
| IRFP9240 | Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-12A) |
| IRFP9240 | 12A, 200V, 0.500 Ohm, P-Channel Power MOSFET |
| IRFPC30 | 10 UF CAP 35V TANT CASE C |
| IRFPC40 | Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.8A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFP90N20DHR | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 200V 94A 3-Pin(3+Tab) TO-247AC |
| IRFP90N20DPBF | 功能描述:MOSFET MOSFT 200V 94A 23mOhm 180nCAC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFP9130 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:P-CHANNEL POWER MOSFETS |
| IRFP9131 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:P-CHANNEL POWER MOSFETS |
| IRFP9132 | 制造商:SAMSUNG 制造商全稱:Samsung semiconductor 功能描述:P-CHANNEL POWER MOSFETS |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。