參數(shù)資料
型號(hào)： IRFP9140N
廠商： International Rectifier
英文描述： Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
中文描述： 功率MOSFET（減振鋼板基本\u003d- 100V的，的Rds（on）\u003d 0.117ohm，身份證\u003d- 23A條）
文件頁(yè)數(shù)： 2/8頁(yè)
文件大?。?/td> 142K
代理商： IRFP9140N
IRFP9140N
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= -13A, V
GS
= 0V
T
J
= 25°C, I
F
= -11A
di/dt = -100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
150
830 1200
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
-1.3
220
V
ns
μC
Parameter
Min. Typ. Max. Units
-100
–––
–––
-0.11 –––
–––
––– 0.117
-2.0
–––
5.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
15
–––
67
–––
51
–––
51
Conditions
V
GS
= 0V, I
D
= -250μA
Reference to 25°C, I
D
= -1mA
V
GS
= -10V, I
D
= -13A
V
DS
= V
GS
, I
D
= -250μA
V
DS
= -50V, I
D
= 11A
V
DS
= -100V, V
GS
= 0V
V
DS
= -80V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
V
GS
= -20V
I
D
= -11A
V
DS
= -80V
V
GS
= -10V, See Fig. 6 and 13
V
DD
= -50V
I
D
= -11A
R
G
= 5.1
R
D
= 4.2
,
See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= -25V
= 1.0MHz, See Fig. 5
V
(BR)DSS
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
Drain-to-Source Breakdown Voltage
–––
V
V/°C
V
S
-4.0
–––
-25
-250
100
-100
97
15
51
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
nC
–––
–––
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1300 –––
400
240
–––
–––
pF
nH
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
L
D
Internal Drain Inductance
L
S
Internal Source Inductance
–––
–––
I
GSS
ns
5.0
I
DSS
Drain-to-Source Leakage Current
13
Starting T
J
= 25°C, L = 7.1mH
R
G
= 25
, I
AS
= -11A. (See Figure 12)
I
SD
≤
-11A, di/dt
≤
-470A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
Uses IRF9540N data and test conditions
Source-Drain Ratings and Characteristics
A
-23
-76
S
D
G
S
D
G
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