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參數(shù)資料
| 型號(hào)： | IRFPS60N50C |
| 廠商： | International Rectifier |
| 英文描述： | SMPS MOSFET(開關(guān)模式電源MOS場(chǎng)效應(yīng)管) |
| 中文描述： | MOSFET的開關(guān)電源（開關(guān)模式電源馬鞍山場(chǎng)效應(yīng)管） |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 54K |
| 代理商： | IRFPS60N50C |
IRFPS60N50C
6/2/00
www.irf.com
1
PD- 93932
SMPS MOSFET
HEXFET
Power MOSFET
l
Switch Mode Power Supply (SMPS)
l
UninterruptIble Power Supply
l
High Speed Power Switching
Benefits
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
Applications
V
DSS
500V
R
DS(on)
typ.
0.038
I
D
60A
Parameter
Max.
60
38
240
390
3.1
± 20
5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case )
Recommended clip force
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300
°C
20
N
Absolute Maximum Ratings
Symbol
E
AS
I
AR
E
AR
Parameter
Typ.
–––
–––
–––
Max.
600
60
39
Units
mJ
A
mJ
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Avalanche Characteristics
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
Typ.
–––
0.24
–––
Max.
0.32
–––
40
Units
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
PROVISIONAL
Super
-
247
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