參數(shù)資料
型號(hào): IRFR48Z
廠商: International Rectifier
英文描述: AUTOMOTIVE MOSFET
中文描述: 汽車MOSFET的
文件頁(yè)數(shù): 11/11頁(yè)
文件大?。?/td> 333K
代理商: IRFR48Z
www.irf.com
11
Data and specifications subject to change without notice.
This product has been designed for the Automotive [Q101]
market.
Qualification Standards can be found on IR’s Web site.
TR
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
TRR
TRL
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
16 mm
13 INCH
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
11/04
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.11mH
R
G
= 25
, I
AS
= 37A, V
GS
=10V. Part not
recommended for use above this value.
Pulse width
1.0ms; duty cycle
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to
application note #AN-994
)
!"#$
θ
相關(guān)PDF資料
PDF描述
IRFU48Z AUTOMOTIVE MOSFET
IRFR5305PBF LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 1200; Supply Voltage: 1.2V; I/Os: 113; Grade: -3; Package: Lead-Free TQFP; Pins: 144; Temp.: AUTO
IRFU5305PBF LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 1200; Supply Voltage: 1.2V; I/Os: 211; Grade: -3; Package: Lead-Free ftBGA; Pins: 256; Temp.: AUTO
IRFR5305 -55V,P-Channel HEXFET Power MOSFET(-55V,P溝道 HEXFET功率MOS場(chǎng)效應(yīng)管)
IRFRU5305 Power MOSFET(Vdss=-55V, Rds(on)=0.065ohm, Id=-31A)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFR48ZPBF 功能描述:MOSFET 55V 1 N-CH HEXFET 11mOhms 40nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR48ZTRLPBF 功能描述:MOSFET 55V 1 N-CH HEXFET 11mOhms 40nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR48ZTRPBF 功能描述:MOSFET MOSFT 55V 62A 11mOhm 40nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFR5305 制造商:International Rectifier 功能描述:MOSFET, P-CHANNEL, -55V, -28A, 65 MOHM, 42 NC QG, D-PAK - Rail/Tube 制造商:International Rectifier 功能描述:MOSFET P D-PAK 制造商:International Rectifier 功能描述:Trans MOSFET P-CH 55V 31A 3-Pin(2+Tab) DPAK
IRFR5305CPBF 功能描述:MOSFET P-CH 55V 31A DPAK RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件