- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377511 > IRFR5410 (International Rectifier) Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A) PDF資料下載
參數(shù)資料
| 型號： | IRFR5410 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d- 100V的，的Rds（on）\u003d 0.205ohm，身份證\u003d- 13A條） |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 215K |
| 代理商： | IRFR5410 |
IRFR/U5410
HEXFET
Power MOSFET
V
DSS
= -100V
R
DS(on)
= 0.205
W
I
D
= -13A
5/3/99
Parameter
Typ.
Max.
1.9
50
110
Units
R
q
JC
R
q
JA
R
q
JA
www.irf.com
Junction-to-Case
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
°C/W
Thermal Resistance
D-Pak
TO-252AA
I-Pak
TO-251AA
l
Ultra Low On-Resistance
l
P-Channel
l
Surface Mount (IRFR5410)
l
Straight Lead (IRFU5410)
l
Advanced Process Technology
l
Fast Switching
l
Fully Avalanche Rated
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
Parameter
Max.
-13
-8.2
-52
66
0.53
± 20
194
-8.4
6.3
-5.0
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
°C
Absolute Maximum Ratings
The D-Pak is designed for surface mounting using vapor
phase, infrared, or wave soldering techniques. The straight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
S
D
G
PD - 9.1533A
1
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFRU5410 | Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A) |
| IRFU5410 | Power MOSFET(Vdss=-100V, Rds(on)=0.205ohm, Id=-13A) |
| IRFR9020 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
| IRFU9020 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
| IRFU9022 | REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFR5410HR | 制造商:International Rectifier 功能描述:TRANS MOSFET P-CH 100V 13A 3PIN DPAK - Rail/Tube |
| IRFR5410PBF | 功能描述:MOSFET 1 P-CH -100V HEXFET 26mOhms 70nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFR5410TR | 功能描述:MOSFET P-CH 100V 13A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFR5410TRL | 功能描述:MOSFET P-CH 100V 13A DPAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFR5410TRLPBF | 功能描述:MOSFET MOSFT PCh -100V 13A 205mOhm 38.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。