型號(hào): | IRFR9210PBF |
廠商: | International Rectifier |
英文描述: | M16C; M16C/60 Series; Microcontroller; Bit Size: 32/16-bit CISC; ROM: 128K; RAM: 10K; ROM Type: Mask ROM; CPU: M16C/60 core; Minimum Instruction Execution Time (ns): 41.7 (@24MHz); Operating Frequency / Supply Voltage: 24MHz/3.0 to 5.5V, 10MHz/2.7 to 5.5V; Operating Ambient Temperature (°C): -20 to 85, -40 to 85; Package Code: PRQP0100JB-A (100P6S-A) |
中文描述: | HEXFET功率MOSFET(減振鋼板基本\u003d - 200V的電壓,的RDS(on)\u003d 3.0ヘ,身份證\u003d - 1.9A) |
文件頁(yè)數(shù): | 2/10頁(yè) |
文件大小: | 1796K |
代理商: | IRFR9210PBF |
相關(guān)PDF資料 |
PDF描述 |
---|---|
IRFU9210PBF | M16C; M16C/60 Series; Microcontroller; Bit Size: 32/16-bit CISC; ROM: 128K; RAM: 10K; ROM Type: Mask ROM; CPU: M16C/60 core; Minimum Instruction Execution Time (ns): 41.7 (@24MHz); Operating Frequency / Supply Voltage: 24MHz/3.0 to 5.5V, 10MHz/2.7 to 5.5V; Operating Ambient Temperature (°C): -20 to 85, -40 to 85; Package Code: PLQP0100KB-A (100P6Q-A) |
IRFR9210 | Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A) |
IRFU9210 | Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.9A) |
IRFR9214PBF | HEXFET POWER MOSFET ( VDSS = -250V , RDS(on) = 3.0ヘ , ID = -2.7A ) |
IRFU9214PBF | HEXFET POWER MOSFET ( VDSS = -250V , RDS(on) = 3.0ヘ , ID = -2.7A ) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
---|---|
IRFR9210TF | 制造商:Samsung Semiconductor 功能描述:IRFR9210TF |
IRFR9210TR | 功能描述:MOSFET P-Chan 200V 1.9 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
IRFR9210TRA | 制造商:KERSEMI 制造商全稱:Kersemi Electronic Co., Ltd. 功能描述:Power MOSFET |
IRFR9210TRL | 功能描述:MOSFET P-Chan 200V 1.9 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
IRFR9210TRLA | 制造商:KERSEMI 制造商全稱:Kersemi Electronic Co., Ltd. 功能描述:Power MOSFET |