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參數(shù)資料
| 型號(hào)： | IRFS31N20DTRL |
| 廠商： | International Rectifier |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 200伏五（巴西）直|第31A條（?。﹟對(duì)263AB |
| 文件頁(yè)數(shù)： | 11/11頁(yè) |
| 文件大小： | 190K |
| 代理商： | IRFS31N20DTRL |
IRFB/IRFS/IRFSL31N20D
www.irf.com
11
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 3.8mH
R
G
= 25
, I
AS
= 18A.
I
SD
≤
18A, di/dt
≤
110A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
This is applied to D
2
Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Notes:
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
This is only applied to TO-220AB package
WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN:
Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA:
15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY:
Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN:
K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA:
1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:
16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice. 2/2000
D
2
Pak Tape & Reel Information
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFB31N20 | Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) |
| IRFS31N20DTRR | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB |
| IRFB31N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) |
| IRFS31N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) |
| IRFSL31N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFS31N20DTRLHR | 制造商:International Rectifier 功能描述:TRANS MOSFET N-CH 200V 31A 3PIN D2PAK - Tape and Reel |
| IRFS31N20DTRLP | 功能描述:MOSFET MOSFT 200V 31A 82mOhm 70nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS31N20DTRLP | 制造商:International Rectifier 功能描述:N CHANNEL MOSFET 200V 31A D2-PAK |
| IRFS31N20DTRR | 功能描述:MOSFET N-CH 200V 31A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFS31N20DTRRP | 功能描述:MOSFET 200V SINGLE N-CH 82mOhms 70nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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