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參數(shù)資料
| 型號： | IRFS38N20DPBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET |
| 中文描述： | HEXFET功率MOSFET |
| 文件頁數(shù)： | 11/11頁 |
| 文件大?。?/td> | 726K |
| 代理商： | IRFS38N20DPBF |
www.irf.com
11
IRFB38N20DPbF/IRFS38N20DPbF/IRFSL38N20DPbF
Repetitive rating; pulse width limited by
max. junction temperature.
Starting T
J
= 25°C, L = 1.3mH
R
G
= 25
, I
AS
= 26A.
I
SD
≤
26A, di/dt
≤
390A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C.
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
This is only applied to TO-220AB package.
This is applied to D
2
Pak, when mounted on 1" square PCB
(FR-4 or G-10 Material ). For recommended footprint and soldering
techniques refer to application note #AN-994.
3
4
4
TRR
FEED DIRECTION
1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
TRL
FEED DIRECTION
10.90 (.429)
10.70 (.421)
16.10 (.634)
15.90 (.626)
1.75 (.069)
1.25 (.049)
11.60 (.457)
11.40 (.449)
15.42 (.609)
15.22 (.601)
4.72 (.136)
4.52 (.178)
24.30 (.957)
23.90 (.941)
0.368 (.0145)
0.342 (.0135)
1.60 (.063)
1.50 (.059)
13.50 (.532)
12.80 (.504)
330.00
(14.173)
MAX.
27.40 (1.079)
23.90 (.941)
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] (IRFB38N20DPbF),
& Industrial (IRFS38N20DPbF/IRFSL38N20D) market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
.
09/05
TO-220 package is not recommended for Surface Mount Application.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFS38N20DPBF | 制造商:International Rectifier 功能描述:MOSFET N 200V 44A D2-PAK 制造商:International Rectifier 功能描述:MOSFET, N, 200V, 44A, D2-PAK 制造商:International Rectifier 功能描述:MOSFET, N, 200V, 44A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:200V; On Resistance Rds(on):54mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation ;RoHS Compliant: Yes |
| IRFS38N20DTRL | 制造商:IRF 制造商全稱:International Rectifier 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 44A I(D) | TO-263AB |
| IRFS38N20DTRLP | 功能描述:MOSFET MOSFT 200V 44A 54mOhm 60nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFS38N20DTRR | 制造商:IRF 制造商全稱:International Rectifier 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 44A I(D) | TO-263AB |
| IRFS38N20DTRRP | 功能描述:MOSFET 200V 1 N-CH HEXFET 54mOhms 60nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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