參數(shù)資料
型號: IRFS450A
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Power MOSFET(500V,0.4Ω,9.6A)(N溝道功率MOS場效應(yīng)管(漏源電壓500V,導(dǎo)通電阻0.4Ω,漏電流9.6A))
中文描述: 9.6 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: TO-3PF, 3 PIN
文件頁數(shù): 1/7頁
文件大小: 229K
代理商: IRFS450A
IRFS450A
BV
DSS
= 500 V
R
DS(on)
= 0.4
I
D
= 9.6 A
500
9.6
6.1
56
±
30
1024
9.6
9.6
3.5
96
0.77
- 55 to +150
300
1.3
40
--
--
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current: 10
μ
A (Max.) @ V
DS
= 500V
Lower R
DS(ON)
: 0.308
(Typ.)
$GYDQFHG 3RZHU 026)(7
Thermal Resistance
Junction-to-Case
Junction-to-Ambient
R
θ
JC
R
θ
JA
°
C/W
Characteristic
Max.
Units
Symbol
Typ.
FEATURES
Absolute Maximum Ratings
Drain-to-Source Voltage
Continuous Drain Current (T
C
=25
°
C)
Continuous Drain Current (T
C
=100
°
C)
Drain Current-Pulsed
(1)
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
(2)
Avalanche Current
(1)
Repetitive Avalanche Energy
(1)
Peak Diode Recovery dv/dt
(3)
Total Power Dissipation (T
C
=25
°
C)
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8 from case for 5-seconds
Characteristic
Value
Units
V
Symbol
V
DSS
I
DM
V
GS
E
AS
I
AR
E
AR
dv/dt
I
D
P
D
T
J
, T
STG
T
L
A
V
mJ
A
mJ
V/ns
W
W/
°
C
A
°
C
TO-3PF
1.Gate 2. Drain 3. Source
3
2
1
1999 Fairchild Semiconductor Corporation
Rev. B
相關(guān)PDF資料
PDF描述
IRFS450 500V N-Channel MOSFET
IRFS450B 500V N-Channel MOSFET
IRFS460 N-Channel Power MOSFET(500V,0.25Ω,12.4A)(N溝道功率MOS場效應(yīng)管(漏源電壓500V,導(dǎo)通電阻0.25Ω,漏電流12.4A))
IRFS510 Advanced Power MOSFET
IRFS510A Advanced Power MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFS450B 功能描述:MOSFET 500V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFS451 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 9A I(D) | SOT-186VAR
IRFS4510PBF 功能描述:MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFS4510TRLPBF 功能描述:MOSFET 100V 63A 13.9mOhm HEXFET 143W 54nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFS460 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 12.4A I(D) | TO-247VAR