參數(shù)資料
型號： IRFS840BF
廠商： Fairchild Semiconductor Corporation
英文描述： 500V N-Channel MOSFET
中文描述： 500V N溝道MOSFET
文件頁數(shù)： 1/10頁
文件大?。?/td> 913K
代理商： IRFS840BF
2005 Fairchild Semiconductor Corporation
February 2005
Rev. B, February 2005
I
IRF840B/IRFS840B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
Features
8.0A, 500V, R
DS(on)
= 0.8
@V
GS
= 10 V
Low gate charge ( typical 41 nC)
Low Crss ( typical 35 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25°C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
V
DSS
I
D
Parameter
IRF840B
IRFS840B
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
Drain-Source Voltage
Drain Current
500
- Continuous (T
C
= 25°C)
- Continuous (T
C
= 100°C)
- Pulsed
8.0
5.1
32
8.0
5.1
32
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
C
= 25°C)
(Note 1)
±
30
320
8.0
13.4
5.5
(Note 2)
(Note 1)
(Note 1)
(Note 3)
134
1.08
44
0.35
- Derate above 25°C
T
J
, T
STG
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
-55 to +150
T
L
300
°C
Symbol
R
θ
JC
R
θ
CS
R
θ
JA
Parameter
IRF840B
0.93
0.5
62.5
IRFS840B
2.86
--
62.5
Units
°C
/
W
°C
/
W
°C
/
W
Thermal Resistance, Junction-to-Case Max.
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient Max.
TO-220
IRF Series
G
S
D
S
D
G
TO-220F
IRFS Series
G
S
D
相關PDF資料
PDF描述
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IRFSZ34A N-Channel Power MOSFET（60V，0.04Ω，20A）(N溝道功率MOS場效應管（漏源電壓60V，導通電阻0.04Ω，漏電流20A）)
IRFSZ44A N-Channel Power MOSFET（60V，0.024Ω，30A）(N溝道功率MOS場效應管（漏源電壓60V，導通電阻0.024Ω，漏電流30A）)
IRFU310B 400V N-Channel MOSFET
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相關代理商/技術參數(shù)
參數(shù)描述
IRFS840BT 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFS841 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4.5A I(D) | TO-220VAR
IRFS842 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4A I(D) | TO-220VAR
IRFS843 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 4A I(D) | TO-220VAR
IRFS9140 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 13.2A I(D) | SOT-186VAR
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