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參數(shù)資料
| 型號(hào)： | IRFSZ44A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Power MOSFET（60V，0.024Ω，30A）(N溝道功率MOS場效應(yīng)管（漏源電壓60V，導(dǎo)通電阻0.024Ω，漏電流30A）) |
| 中文描述： | 30 A, 60 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-220F, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 266K |
| 代理商： | IRFSZ44A |
N-C HANNEL
POWER MOSFET
Electrical Characteristics
(T
C
=25
unless otherwise specified)
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Characteristic
Symbol
BV
DSS
BV/ T
J
V
GS(th)
Max. Units
Typ.
Min.
Test Condition
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain( “Miller “) Charge
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
R
DS(on)
I
GSS
I
DSS
V
V/
V
nA
A
pF
ns
nC
--
--
--
--
--
--
--
--
--
--
--
--
--
V
GS
=0V,I
D
=250 A
I
D
=250 A
See Fig 7
V
DS
=5V,I
D
=250 A
V
GS
=20V
V
GS
=-20V
V
DS
=60V
V
DS
=48V,T
C
=150
V
GS
=10V,I
D
=15A
V
DS
=30V,I
D
=15A
V
DD
=30V,I
D
=50A,
R
G
=9.1
See Fig 13
V
DS
=48V,V
GS
=10V,
I
D
=50A
See Fig 6 & Fig 12
Drain-to-Source Leakage Current
V
GS
=0V,V
DS
=25V,f =1MHz
See Fig 5
Source-Drain Diode Ratings and Characteristics
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
I
SM
V
SD
t
rr
Q
rr
Characteristic
Symbol
Max. Units
Typ.
Min.
Test Condition
--
--
--
--
--
A
V
ns
C
μ
Integral reverse pn-diode
in the MOSFET
T
J
=25
,I
S
=30A,V
GS
=0V
T
J
=25
,I
F
=50A
di
F
/dt=100A/ s
IRFSZ44A
60
--
2.0
--
--
--
--
--
0.063
--
--
--
--
--
590
220
20
16
68
70
64
12.3
23.6
--
--
4.0
100
-100
10
100
0.024
--
2300
680
255
40
40
140
140
83
--
--
31.25
1770
--
--
--
85
0.24
30
200
1.8
--
--
Notes ;
Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
L=1mH, I
AS
=30A, V
DD
=25V, R
G
=27 , Starting T
J
=25
I
SD
50A, di/dt 350A/ s, V
DD
BV
DSS
, Starting T
J
=25
Pulse Test : Pulse Width = 250 s, Duty Cycle 2%
Essentially Independent of Operating Temperature
O
5
o
C
o
C
o
C
μ
o
C
o
C
O
4
O
4
O
4
O
4
O
5
O
5
O
4
O
1
O
4
o
C
o
C
<
<
O
1
O
O
3
O
2
4
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