- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄377510 > IRFU2605 (International Rectifier) Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A) PDF資料下載
參數(shù)資料
| 型號： | IRFU2605 |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=19A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 55V的，的Rds（on）\u003d 0.075ohm，身份證\u003d 19A條） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 345K |
| 代理商： | IRFU2605 |
PD - 9.1253
HEXFET
Power MOSFET
Ultra Low On-Resistance
ESD Protected
Surface Mount (IRFR2605)
Straight Lead (IRFU2605)
150°C Operating Temperature
Repetitive Avalanche Rated
Fast Switching
IRFU2605
IRFR2605
V
DSS
= 55V
R
DS(on)
= 0.075
I
D
= 19A
Description
Fourth Generation HEXFETs from International Rectifier utilize advanced
processing techniques that achieve extremely low on-resistance per silicon area
and allow electrostatic discharge protection to be integrated in the gate structure.
These benefits, combined with the ruggedized device design that HEXFETs are
known for, provide the designer with extremely efficient and reliable device for use
in a wide variety of applications.
The D-PAK is designed for surface mounting using vapor phase, infrared, or wave
soldering techniques. The straight lead version (IRFU series) is for through-hole
mounting applications. Power dissipation levels up to 1.5 watts are possible in
typical surface mount applications.
Absolute Maximum Ratings
Parameter
Max.
19
12
76
50
3.1
0.40
0.025
±20
100
12
5.0
4.5
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation (PCB Mount)**
Linear Derating Factor
Linear Derating Factor (PCB Mount)**
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Human Body Model, 100pF, 1.5K
A
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
V
mJ
A
mJ
V/ns
-55 to + 150
300 (1.6mm from case)
2000
V
ESD
V
Thermal Resistance
Parameter
Min.
—
—
—
Typ.
—
—
—
Max.
2.5
40
62
Units
R
θ
JC
R
θ
JA
R
θ
JA
** When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer to application note #AN-994.
Junction-to-Ambient (PCB Mount)**
Junction-to-Ambient
°C/W
W/°C
W
°C
G
D
S
D-PAK
TO-252AA
I-PAK
TO-251AA
Next Data Sheet
Index
Previous Datasheet
To Order
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFR2905 | AUTOMOTIVE MOSFET |
| IRFU2905Z | AUTOMOTIVE MOSFET |
| IRFR2905Z | AUTOMOTIVE MOSFET |
| IRFR310 | Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=1.7A) |
| IRFU310 | Power MOSFET(Vdss=400V, Rds(on)=3.6ohm, Id=1.7A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFU2607Z | 制造商:IRF 制造商全稱:International Rectifier 功能描述:AUTOMOTIVE MOSFET |
| IRFU2607ZPBF | 功能描述:MOSFET MOSFT 75V 45A 22mOhm 34nC Qg RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFU2905Z | 功能描述:MOSFET N-CH 55V 42A I-PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFU2905ZPBF | 功能描述:MOSFET MOSFT 55V 59A 14.5mOhm 29nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFU310 | 功能描述:MOSFET N-Chan 400V 1.7 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。