參數(shù)資料
型號： IRFU322
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.6A I(D) | TO-251AA
中文描述： 晶體管| MOSFET的| N溝道| 400V五（巴西）直| 2.6AI（四）|對251AA
文件頁數(shù)： 2/7頁
文件大?。?/td> 117K
代理商： IRFU322
2002 Fairchild Semiconductor Corporation
IRFR320, IRFU320 Rev. B
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
IRFR320, IRFU320
400
400
3.1
2.0
12
±
20
50
0.4
190
-55 to 150
UNITS
V
V
A
A
A
V
W
W/
o
C
mJ
o
C
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DS
Drain to Gate Voltage (R
GS
= 20k
)
(Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
D
T
C
= 100
o
C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Linear Derating Factor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AS
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
J,
T
STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
L
Package Body for 10s, See Techbrief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
pkg
300
260
o
C
o
C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T
J
= 25
o
C to 125
o
C.
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Drain to Source Breakdown Voltage
BV
DSS
V
GS(TH)
I
DSS
I
D
= 250
μ
A, V
GS
= 0V, (Figure 10)
V
GS
= V
DS
, I
D
= 250
μ
A
V
DS
= Rated BV
DSS
, V
GS
= 0V
V
DS
= 0.8 x Rated BV
DSS
, V
GS
= 0V, T
J
= 125
o
C
V
DS
> I
D(ON)
x r
DS(ON)MAX
, V
GS
= 10V,
(Figure 7)
V
GS
=
±
20V
I
D
= 1.7A, V
GS
= 10V, (Figures 8, 9)
V
DS
≥
10V, I
D
= 2.0A, (Figure 12)
V
DD
=
200V, I
D
≈
3.1A, R
GS
= 18
, R
L
= 63
,
V
GS
= 10V
MOSFET Switching Times are Essentially Indepen-
dent of Operating Temperature
400
-
-
V
Gate Threshold Voltage
2.0
-
4.0
V
μ
A
μ
A
A
Zero Gate Voltage Drain Current
-
-
25
-
-
250
On-State Drain Current (Note 2)
I
D(ON)
3.1
-
-
Gate to Source Leakage Current
I
GSS
r
DS(ON)
g
fs
t
d(ON)
t
r
t
d(OFF)
t
f
Q
g(TOT)
-
-
±
100
1.800
nA
Drain to Source On Resistance (Note 2)
-
1.600
S
Forward Transconductance (Note 2)
1.7
2.6
-
Turn-On Delay Time
-
10
15
ns
Rise Time
-
14
21
ns
Turn-Off Delay Time
-
30
45
ns
Fall Time
-
13
20
ns
Total Gate Charge
(Gate to Source + Gate to Drain)
V
GS
= 10V, I
D
= 3.1A, V
DS
= 0.8 x Rated BV
DSS,
I
G(REF)
= 1.5mA, (Figure 14)
Gate Charge is Essentially Independent of Operat-
ing Temperature
-
13
20
nC
Gate to Source Charge
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
L
D
-
2.2
3.3
nC
Gate to Drain “Miller” Charge
-
7.2
11
nC
Input Capacitance
V
DS
= 25V, V
GS
= 0V, f = 1MHz, (Figure 11)
-
350
-
pF
Output Capacitance
-
64
-
pF
Reverse Transfer Capacitance
-
8.1
-
pF
Internal Drain Inductance
Measured From the Drain
Lead, 6.0mm (0.25in) from
Package to Center
of Die
Modified MOSFET
Symbol Showing the
Internal Device
Inductances
-
4.5
-
nH
Internal Source Inductance
L
S
Measured From the
Source Lead, 6.0mm
(0.25in) from Package to
Source Bonding Pad
-
7.5
-
nH
Thermal Resistance, Junction to Case
R
θ
JC
R
θ
JA
-
-
2.5
o
C/W
o
C/W
Thermal Resistance, Junction to Ambient
Typical Solder Mount
-
-
110
L
S
L
D
G
D
S
IRFR320, IRFU320
相關(guān)PDF資料
PDF描述
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