參數(shù)資料
型號(hào): IRFU3504PbF
廠商: International Rectifier
英文描述: AUTOMOTIVE MOSFET
中文描述: 汽車MOSFET的
文件頁數(shù): 2/11頁
文件大?。?/td> 593K
代理商: IRFU3504PBF
2
www.irf.com
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
T
J
= 25°C, I
F
= 30A, V
DD
= 20V
di/dt = 100A/μs
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
53
86
1.3
80
130
V
ns
nC
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
Static Drain-to-Source On-Resistance
V
GS(th)
Gate Threshold Voltage
g
fs
Forward Transconductance
S
D
G
Source-Drain Ratings and Characteristics
87
350
Min. Typ. Max. Units
40
–––
–––
0.041 –––
–––
7.8
2.0
–––
40
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
48
–––
12
–––
13
–––
11
–––
53
–––
36
–––
22
–––
4.5
Conditions
V
GS
= 0V, I
D
= 250μA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 30A
V
DS
= 10V, I
D
= 250μA
V
DS
= 10V, I
D
= 30A
V
DS
= 40V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
V
GS
= -20V
I
D
= 30A
V
DS
= 32V
V
GS
= 10V
V
DD
= 20V
I
D
= 30A
R
G
= 6.8
V
GS
= 10V
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, = 1.0MHz
V
GS
= 0V, V
DS
= 32V, = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 32V
–––
V
V/°C
m
V
S
9.2
4.0
–––
20
250
200
-200
71
18
20
–––
–––
–––
–––
–––
μA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
nA
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
nC
nH
L
S
Internal Source Inductance
–––
7.5
–––
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
–––
–––
–––
–––
2150 –––
580
46
2830 –––
510
870
–––
–––
pF
–––
–––
S
D
G
I
GSS
ns
I
DSS
Drain-to-Source Leakage Current
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