參數(shù)資料
型號(hào)： IRFU3505PBF
廠商： International Rectifier
英文描述： HEXFET㈢ Power MOSFET
中文描述： ㈢的HEXFET功率MOSFET
文件頁數(shù)： 1/12頁
文件大小： 283K
代理商： IRFU3505PBF
IRFR3505PbF
IRFU3505PbF
HEXFET
Power MOSFET
S
D
G
V
DSS
= 55V
R
DS(on)
= 0.013
I
D
= 30A
www.irf.com
1
D-Pak
IRFR3505 IRFU3505
I-Pak
Parameter
Typ.
–––
–––
–––
Max.
1.09
40
110
Units
R
θ
JC
R
θ
JA
R
θ
JA
Junction-to-Case
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
°C/W
Thermal Resistance
AUTOMOTIVE MOSFET
Specifically designed for Automotive applications, this HEXFET
Power
MOSFET utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this product are
a 175°C junction operating temperature, fast switching speed and im-
proved repetitive avalanche rating. These features combine to make this
design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
The D-Pak is designed for surface mounting using vapor phase, infrared,
or wave soldering techniques. The straight lead version (IRFU series) is
for through-hole mounting applications. Power dissipation levels up to
1.5 watts are possible in typical surface mount applications.
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon limited)
I
D
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ 10V (See Fig.9)
I
D
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Package limited)
I
DM
Pulsed Drain Current
P
D
@T
C
= 25°C
Power Dissipation
Linear Derating Factor
V
GS
Gate-to-Source Voltage
E
AS
Single Pulse Avalanche Energy
E
AS
(tested)
Single Pulse Avalanche Energy Tested Value
I
AR
Avalanche Current
E
AR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
T
J
Operating Junction and
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Description
Advanced Process Technology
Ultra Low On-Resistance
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
Features
Max.
Units
71
49
30
280
140
0.92
± 20
210
410
A
W
W/°C
V
mJ
See Fig.12a, 12b, 15, 16
A
mJ
V/ns
4.0
-55 to + 175
°C
300 (1.6mm from case )
PD - 95511A
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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