參數(shù)資料
型號： IRFU420A
廠商： International Rectifier
英文描述： SMPS MOSFET
中文描述： MOSFET的開關(guān)電源
文件頁數(shù)： 2/10頁
文件大?。?/td> 114K
代理商： IRFU420A
IRFR420A/IRFU420A
2
www.irf.com
Parameter
Min. Typ. Max. Units
1.4
–––
–––
–––
17 I
D
= 2.5A
–––
–––
4.3
–––
–––
8.5
–––
8.1
–––
–––
12
–––
–––
16
–––
–––
13
–––
–––
340
–––
–––
53
–––
–––
2.7
–––
–––
490
–––
–––
15
–––
–––
28
–––
Conditions
V
DS
= 50V, I
D
= 1.5A
g
fs
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
S
nC
V
DS
= 400V
V
GS
= 10V, See Fig. 6 and 13
V
DD
= 250V
I
D
= 2.5A
R
G
= 21
R
D
= 97
,See Fig. 10
V
GS
= 0V
V
DS
= 25V
= 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V,
= 1.0MHz
V
GS
= 0V, V
DS
= 400V,
= 1.0MHz
V
GS
= 0V, V
DS
= 0V to 400V
pF
Dynamic @ T
J
= 25°C (unless otherwise specified)
ns
S
D
G
Parameter
Min. Typ. Max. Units
Conditions
I
S
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
J
= 25
°
C, I
S
= 2.5A, V
GS
= 0V
T
J
= 25
°
C, I
F
= 2.5A
di/dt = 100A/μs
–––
–––
I
SM
–––
–––
V
SD
t
rr
Q
rr
t
on
–––
–––
–––
–––
330
760 1140
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
1.6
500
V
ns
nC
Diode Characteristics
3.3
10
A
Static @ T
J
= 25
°
C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
(BR)DSS
/
T
J
Breakdown Voltage Temp. Coefficient
–––
0.60
–––
V/
°
C Reference to 25
°
C, I
D
= 1mA
R
DS(on)
Static Drain-to-Source On-Resistance
–––
V
GS(th)
Gate Threshold Voltage
2.0
–––
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Min. Typ. Max. Units
500
–––
Conditions
V
GS
= 0V, I
D
= 250μA
–––
V
–––
–––
–––
–––
–––
–––
3.0
4.5
25
250
100
-100
V
V
GS
= 10V, I
D
= 1.5A
V
DS
= V
GS
, I
D
= 250μA
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, V
GS
= 0V, T
J
= 125
°
C
V
GS
= 30V
V
GS
= -30V
μA
nA
I
GSS
I
DSS
Drain-to-Source Leakage Current
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
2.5A, di/dt
≤
270A/μs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150
°
C
Notes:
Starting T
J
= 25
°
C, L = 45mH
R
G
= 25
, I
AS
= 2.5A. (See Figure 12)
Pulse width
≤
300μs; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IRFU420APBF 功能描述:MOSFET N-Chan 500V 3.3 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFU420B 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET
IRFU420BTU 功能描述:MOSFET 500V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFU420PBF 功能描述:MOSFET N-Chan 500V 2.4 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IRFU421 制造商:Rochester Electronics LLC 功能描述:- Bulk
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