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參數(shù)資料
| 型號： | IRFU420APBF |
| 廠商： | International Rectifier |
| 英文描述： | HEXFET Power MOSFET ( VDSS = 500V , RDS(on) max = 3.0ヘ , ID = 3.3A ) |
| 中文描述： | HEXFET功率MOSFET（減振鋼板基本\u003d 500V及的RDS（on）最大值\u003d 3.0ヘ，身份證\u003d 3.3A） |
| 文件頁數(shù)： | 1/10頁 |
| 文件大?。?/td> | 235K |
| 代理商： | IRFU420APBF |
www.irf.com
1
MOSFET
HEXFET Power MOSFET
Switch Mode Power Supply (SMPS)
Uninterruptible Power Supply
High speed power switching
Lead-Free
Low Gate Charge Qg results in Simple
Drive Requirement
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
Avalanche Voltage and Current
Effective C
OSS
specified (See AN 1001)
V
DSS
500V
R
DS
(on) max
3.0
I
D
3.3A
Parameter
Typ.
–––
–––
–––
Max.
140
2.5
5.0
Units
mJ
A
mJ
E
AS
I
AR
E
AR
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Avalanche Characteristics
Parameter
Typ.
–––
0.50
–––
Max.
1.5
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
D-Pak
IRFR420A
I-Pak
IRFU420A
Parameter
Max.
3.3
2.1
10
83
0.67
± 30
3.4
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
A
W
W/°C
V
V/ns
V
GS
dv/dt
T
J
T
STG
-55 to + 150
300 (1.6mm from case )
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFR420A | SMPS MOSFET |
| IRFU420A | SMPS MOSFET |
| IRFR420PBF | HEXFET POWER MOSFET ( VDSS = 500V , RDS(on) = 3.0ヘ , ID = 2.4A ) |
| IRFU420PBF | HEXFET POWER MOSFET ( VDSS = 500V , RDS(on) = 3.0ヘ , ID = 2.4A ) |
| IRFR420 | Power MOSFET(Vdss=500V, Rds(on)=3.0ohm, Id=2.4A) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFU420B | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:500V N-Channel MOSFET |
| IRFU420BTU | 功能描述:MOSFET 500V N-Channel B-FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFU420PBF | 功能描述:MOSFET N-Chan 500V 2.4 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFU421 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| IRFU422 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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