- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385445 > IRFZ44V (International Rectifier) Power MOSFET(Vdss=60V, Rds(on)=16.5mw, Id=55A) PDF資料下載
參數(shù)資料
| 型號： | IRFZ44V |
| 廠商： | International Rectifier |
| 英文描述： | Power MOSFET(Vdss=60V, Rds(on)=16.5mw, Id=55A) |
| 中文描述： | 功率MOSFET（減振鋼板基本\u003d 60V的，的Rds（on）\u003d 16.5mw，身份證\u003d 55A條） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 229K |
| 代理商： | IRFZ44V |
IRFZ44V
HEXFET
Power MOSFET
3/25/01
Parameter
Max.
55
39
220
115
0.77
± 20
115
55
11
4.5
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Absolute Maximum Ratings
Parameter
Typ.
–––
0.50
–––
Max.
1.3
–––
62
Units
R
q
JC
R
q
CS
R
q
JA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
1
V
DSS
= 60V
R
DS(on)
= 16.5m
W
I
D
= 55A
S
D
G
TO-220AB
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Optimized for SMPS Applications
Description
PD - 93957A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRFZ44Z | RES 510-OHM 5% 0.25W 200PPM THICK-FILM SMD-1206 5K/REEL-7IN-PA |
| IRFZ44ZL | Power MOSFET(Vdss=55V, Rds(on)=13.9mohm, Id=51A) |
| IRFZ44ZS | Power MOSFET(Vdss=55V, Rds(on)=13.9mohm, Id=51A) |
| IRFZ46NLPbF | HEXFET Power MOSFET |
| IRFZ46NSPBF | HEXFET Power MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRFZ44VL | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Power MOSFET(Vdss=60V, Rds(on)=16.5mohm, Id=55A) |
| IRFZ44VLPBF | 制造商:International Rectifier 功能描述:Trans MOSFET N-CH 60V 55A 3-Pin(3+Tab) TO-262 |
| IRFZ44VPBF | 功能描述:MOSFET MOSFT 60V 55A 16.5mOhm 44.7nC RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRFZ44VS | 功能描述:MOSFET N-CH 60V 55A D2PAK RoHS:否 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:HEXFET® 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| IRFZ44VSPBF | 制造商:International Rectifier 功能描述:MOSFET N 60V 55A D2-PAK 制造商:International Rectifier 功能描述:MOSFET, N, 60V, 55A, D2-PAK 制造商:International Rectifier 功能描述:Single N-Channel 60 V 115 W 67 nC Hexfet Power Mosfet Surface Mount - D2PAK-3 |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。