參數(shù)資料
型號: IRFZ48V
廠商: International Rectifier
英文描述: Power MOSFET(Vdss=60V, Rds(on)=12mohm, Id=72A)
中文描述: 功率MOSFET(減振鋼板基本\u003d 60V的,的Rds(on)\u003d 12mohm,身份證\u003d 72A條)
文件頁數(shù): 1/8頁
文件大?。?/td> 111K
代理商: IRFZ48V
IRFZ48V
HEXFET
Power MOSFET
3/25/01
Parameter
Max.
72
51
290
150
1.0
± 20
166
72
15
5.3
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
A
W
W/°C
V
mJ
A
mJ
V/ns
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
-55 to + 175
300 (1.6mm from case )
10 lbfin (1.1Nm)
°C
Absolute Maximum Ratings
Parameter
Typ.
–––
0.50
–––
Max.
1.0
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
www.irf.com
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Thermal Resistance
1
V
DSS
= 60V
R
DS(on)
= 12m
I
D
= 72A
S
D
G
TO-220AB
Advanced HEXFET
Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels
to approximately 50 watts. The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Optimized for SMPS Applications
Description
PD - 93959A
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