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參數(shù)資料
| 型號： | IRG4PG40MD |
| 廠商： | International Rectifier |
| 英文描述： | Fit Rate / Equivalent Device Hours |
| 中文描述： | FIT率/等效器件小時 |
| 文件頁數(shù)： | 29/35頁 |
| 文件大?。?/td> | 112K |
| 代理商： | IRG4PG40MD |
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ACCELERATEDMOISTURE RESISTANCE (A/C)Unbiased
Conditions
Temperature:
Pressure:
Bias:
Duration:
Test points:
121°C
15Ibs psig
None
96 Hours nominal
96 Hours
Purpose
Failure Modes
Sensitive Parameters
V
(BR)CES,
V
CE(on)
Accelerated Moisture Resistance test is performed to evaluate the moisture resistance
of non-hermetic packages. Severe conditions of pressure, humidity and temperature
are applied that accelerate the penetration of moisture through the interface of the
encapsulant and the conductors that pass through it.
There are two failure modes which have been observed. The first mode, degradation
of the breakdown characteristics of the devices, can occur.
The second failure mode that has been observed is due to cathodic corrosion of
aluminum emitter bonding pad. Water will ingress to the top of the die. It is possible
for contaminants to work their way into the active area of the device while under
pressure in the presence of water. For that reason, the devices and test board are
cleaned prior to use. Then, throughout the course of the testing, the parts and the test
boards are never brought into contact with human contaminant.
IGBT / CoPack
Quarterly Reliability Report
Page 29 of 35
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PDF描述 |
|---|---|
| IRG4PG40SD | Fit Rate / Equivalent Device Hours |
| IRG4PG40UD | Fit Rate / Equivalent Device Hours |
| IRG4PH40FD | Fit Rate / Equivalent Device Hours |
| IRG4PH40MD | Fit Rate / Equivalent Device Hours |
| IRG4PF50WDPBF | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IRG4PG40SD | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRG4PG40UD | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRG4PH20 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.17V, @Vge=15V, Ic=5.0A) |
| IRG4PH20K | 功能描述:IGBT UFAST 1200V 11A TO-247AC RoHS:否 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
| IRG4PH20KD | 功能描述:IGBT W/DIODE 1200V 11A TO-247AC RoHS:否 類別:分離式半導體產(chǎn)品 >> IGBT - 單路 系列:- 標準包裝:30 系列:GenX3™ IGBT 類型:PT 電壓 - 集電極發(fā)射極擊穿（最大）:1200V Vge, Ic時的最大Vce（開）:3V @ 15V，100A 電流 - 集電極 (Ic)（最大）:200A 功率 - 最大:830W 輸入類型:標準 安裝類型:通孔 封裝/外殼:TO-247-3 供應商設備封裝:PLUS247?-3 包裝:管件 |
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