參數(shù)資料
型號： IRG4PH50K
廠商： International Rectifier
英文描述： Insulated Gate Bipolar Transistors (IGBTs)(短路額定快速絕緣柵型雙極型晶體管)
中文描述： 絕緣門雙極晶體管（IGBTs）（短路額定快速絕緣柵型雙極型晶體管）
文件頁數(shù)： 2/6頁
文件大?。?/td> 92K
代理商： IRG4PH50K
IRG4PH50K
C-2
www.irf.com
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Min. Typ. Max. Units
—
180
—
25
—
70
—
36
—
27
—
200
—
130
—
1.21
—
2.25
—
3.46
10
—
Conditions
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
sc
270
38
110
—
—
300
190
—
—
4.1
—
I
C
= 24A
V
CC
= 400V
V
GE
= 15V
nC
see figure 8
T
J
= 25°C
I
C
= 24A, V
CC
= 960V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
see figures 9,10,14
mJ
μs
V
CC
= 720V, T
J
= 125°C
V
GE
= 15V, R
G
= 5.0
T
J
= 150°C,
I
C
= 24A, V
CC
= 960V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
see figures 10,11,14
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
Notes:
Repetitive rating; V
GE
= 20V, pulse width limited bymax.
junction temperature. (see figure 13b)
V
CC
= 80% (V
CES
), V
GE
= 20V, L = 10μH, R
G
= 5.0
,
(see figure 13a)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
—
—
—
—
—
35
29
380
280
7.80
13
2800
140
53
—
—
—
—
—
—
—
—
—
mJ
nH
pF
see figure 7
Parameter
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
Min. Typ. Max. Units
1200
—
18
—
—
0.91
—
2.77
—
3.28
—
2.54
3.0
—
—
-10
13
19
—
—
—
—
—
—
—
—
Conditions
V
(BR)CES
V
(BR)ECS
—
—
—
3.5
—
—
6.0
—
—
250
2.0
5000
±100
V
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 1.0A
V
GE
= 0V, I
C
= 2.0mA
I
C
= 24A V
GE
= 15V
I
C
= 45A
I
C
= 24A , T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
mV/°C V
CE
= V
GE
, I
C
= 2.0mA
S
V
CE
=
100 V, I
C
= 24A
V
GE
= 0V, V
CE
= 1200V
V
GE
= 0V, V
CE
= 10V, T
J
= 25°C
V
GE
= 0V, V
CE
= 1200V, T
J
= 150°C
nA
V
GE
= ±20V
V/°C
V
CE(ON)
Collector-to-Emitter Saturation Voltage
see figures 2, 5
V
GE(th)
V
GE(th)
/
T
J
g
fe
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
I
CES
Zero Gate Voltage Collector Current
V
μA
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
Repetitive rating; pulse width limited by maximum
junction temperature.
Pulse width
≤
80μs; duty factor
≤
0.1%.
Pulse width 5.0μs, single shot.
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