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參數(shù)資料
| 型號： | IRG4ZC71KD |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 224K |
| 代理商： | IRG4ZC71KD |
IRG4ZC71KD
2
www.irf.com
Parameter
Q
g
Total Gate Charge (turn-on)
Q
ge
Gate - Emitter Charge (turn-on)
Q
gc
Gate - Collector Charge (turn-on)
t
d(on)
Turn-On Delay Time
t
r
Rise Time
t
d(off)
Turn-Off Delay Time
t
f
Fall Time
E
on
Turn-On Switching Loss
E
off
Turn-Off Switching Loss
E
ts
Total Switching Loss
t
sc
Short Circuit Withstand Time
Min. Typ. Max. Units
—
343
—
44
—
161
—
140
—
63
—
475
—
133
—
1.49
—
3.11
—
4.60
10
—
Conditions
515
66
242
—
—
710
200
—
—
6.0
—
I
C
= 60A
V
CC
= 400V
V
GE
= 15V
nC
See Fig.8
T
J
= 25°C
I
C
= 60A, V
CC
= 480V
V
GE
= 15V, R
G
= 5.0
Energy losses include "tail"
and diode reverse recovery
See Fig. 9,10,18
V
CC
= 360V, T
J
= 125°C
V
GE
= 15V, R
G
= 5.0
T
J
= 150°C, See Fig. 10,11,18
I
C
= 60A, V
CC
= 480V
V
GE
= 15V, R
G
= 5.0
,
Energy losses include "tail"
and diode reverse recovery
Measured 5mm from package
V
GE
= 0V
V
CC
= 30V
= 1.0MHz
T
J
= 25°C See Fig.
T
J
= 125°C 14 I
F
= 50A
T
J
= 25°C See Fig.
T
J
= 125°C 15 V
R
= 200V
T
J
= 25°C See Fig.
T
J
= 125°C 16 di/dt = 200A/μs
T
J
= 25°C See Fig.
T
J
= 125°C 17
mJ
μs
t
d(on)
t
r
t
d(off)
t
f
E
ts
L
E
C
ies
C
oes
C
res
t
rr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
145
65
630
196
7.6
2.0
6850
730
190
90
120
7.3
11
360
780
370
220
—
—
—
—
—
—
—
—
—
140
180
11
16
550
1200
—
—
mJ
nH
pF
See Fig. 7
ns
I
rr
Diode Peak Reverse Recovery Current
A
Q
rr
Diode Reverse Recovery Charge
nC
di
(rec)M
/dt
Diode Peak Rate of Fall of Recovery
During t
b
A/μs
Switching Characteristics @ T
J
= 25°C (unless otherwise specified)
ns
ns
Parameter
V
(BR)CES
Collector-to-Emitter Breakdown Voltage
V
(BR)CES
/
T
J
Temperature Coeff. of Breakdown Voltage
V
CE(on)
Collector-to-Emitter Saturation Voltage
Min. Typ. Max. Units
600
—
—
0.5
—
1.75
—
2.15
—
1.75
3.0
—
—
-10
31
46
—
—
—
—
—
1.4
—
1.4
—
—
±100
Conditions
—
—
2.3
—
—
6.0
—
—
500
13
1.7
—
V
V
GE
= 0V, I
C
= 250μA
V
GE
= 0V, I
C
= 10mA
I
C
= 60A
I
C
= 100A
I
C
= 60A, T
J
= 150°C
V
CE
= V
GE
, I
C
= 250μA
mV/°C V
CE
= V
GE
, I
C
= 1.5mA
S
V
CE
= 100V, I
C
= 60A
μA
V
GE
= 0V, V
CE
= 600V
mA
V
GE
= 0V, V
CE
= 600V, T
J
= 150°C
V
I
C
= 60A
I
C
= 60A, T
J
= 150°C
nA
V
GE
= ±20V
V/°C
V
GE
= 15V
See Fig. 2, 5
V
V
GE(th)
V
GE(th)
/
T
J
g
fe
I
CES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
V
FM
Diode Forward Voltage Drop
See Fig. 13
I
GES
Gate-to-Emitter Leakage Current
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
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