參數(shù)資料
型號(hào)： IRGB4056DPBF
廠商： International Rectifier
英文描述： INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
中文描述： 絕緣柵雙極型晶體管，超快軟恢復(fù)二極管
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 772K
代理商： IRGB4056DPBF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
Low V
CE (ON)
Trench IGBT Technology
Low switching losses
Maximum Junction temperature 175 °C
5 μS short circuit SOA
Square RBSOA
100% of the parts tested for 4X rated current (I
LM
)
Positive V
CE (ON)
Temperature co-efficient
Ultra fast soft Recovery Co-Pak Diode
Tight parameter distribution
Lead Free Package
IRGB4056DPbF
1
www.irf.com
02/24/06
E
G
n-channel
C
V
CES
= 600V
I
C
= 12A, T
C
= 100°C
t
SC
≥
5μs, T
J(max)
= 175°C
V
CE(on)
typ. = 1.55V
Benefits
High Efficiency in a wide range of applications
Suitable for a wide range of switching frequencies due to
Low V
CE (ON)
and Low Switching losses
Rugged transient Performance for increased reliability
Excellent Current sharing in parallel operation
Low EMI
G
C
E
Gate
Collector
Emitter
TO-220AB
GC
E
C
Absolute Maximum Ratings
Parameter
Max.
600
24
12
48
48
24
12
48
±20
±30
140
70
-55 to +175
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 25°C
I
F
@ T
C
= 100°C
I
FM
V
GE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current
Clamped Inductive Load Current
A
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
V
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
Typ.
–––
Max.
1.07
Units
°C/W
R
θ
JC
(IGBT)
R
θ
JC
(Diode)
R
θ
CS
R
θ
JA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
–––
–––
3.66
Thermal Resistance, Case-to-Sink (flat, greased surface)
–––
0.50
–––
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
80
–––
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IRGB4062DPBF 功能描述:IGBT 晶體管 600V UltraFast Trench IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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