- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄385446 > IRGBC20F (International Rectifier) Insulated Gate Bipolar Transistors (IGBTs)(超快速絕緣柵型雙極型晶體管) PDF資料下載
參數(shù)資料
| 型號： | IRGBC20F |
| 廠商： | International Rectifier |
| 英文描述： | Insulated Gate Bipolar Transistors (IGBTs)(超快速絕緣柵型雙極型晶體管) |
| 中文描述： | 絕緣門雙極晶體管（IGBTs）（超快速絕緣柵型雙極型晶體管） |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 98K |
| 代理商： | IRGBC20F |
C-51
Revision 0
IRGBC20F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Parameter
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
—
—
—
—
Typ.
—
0.50
—
2.0 (0.07)
Max.
2.1
—
80
—
Units
R
θ
JC
R
θ
CS
R
θ
JA
Wt
°C/W
g (oz)
Features
Switching-loss rating includes all "tail" losses
Optimized for medium operating frequency ( 1 to
10kHz) See Fig. 1 for Current vs. Frequency curve
V
CES
= 600V
V
CE(sat)
≤
2.8V
@V
GE
= 15V, I
C
= 9.0A
E
C
G
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
16
9.0
64
64
±20
5.0
60
24
Units
V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
V
GE
E
ARV
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
A
V
mJ
W
-55 to +150
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Thermal Resistance
PD - 9.686A
TO-220AB
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRGBC20M-S | Insulated Gate Bipolar Transistors (IGBTs)(短路額定超快速絕緣柵型雙極型晶體管) |
| IRGBC20M | Insulated Gate Bipolar Transistors (IGBTs)(短路額定快速絕緣柵型雙極型晶體管) |
| IRGBC30K | Aluminum Polymer SMT Capacitor; Capacitance: 100uF; Voltage: 4V; Case Size: 6.3x6 mm; Packaging: Tape & Reel |
| IRGBC30MD2-S | Aluminum Polymer SMT Capacitor; Capacitance: 470uF; Voltage: 4V; Case Size: 10x8 mm; Packaging: Tape & Reel |
| IRGBC30M | Aluminum Polymer SMT Capacitor; Capacitance: 220uF; Voltage: 4V; Case Size: 8x7 mm; Packaging: Tape & Reel |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRGBC20FD2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:IRGBC20FD2 |
| IRGBC20K | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGBC20KD2 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:Fit Rate / Equivalent Device Hours |
| IRGBC20KD2S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 10A I(C) | TO-252VAR |
| IRGBC20KD2-S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。